Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy
Tóm tắt
The effect of resistive switching in individual dislocations in memristor Ag/Ge/Si(001) structures is demonstrated experimentally using atomic force microscopy with a conducting probe. A hysteresis is found in the current–voltage characteristics of dislocations, which is typical of bipolar resistive switching related to the formation and destruction of an Ag filament in a Ge layer as a result of drift of Ag+ ions along the dislocation core.
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