Physica E: Low-dimensional Systems and Nanostructures

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Finite-dimensional spin glass and quantum error correcting code
Physica E: Low-dimensional Systems and Nanostructures - Tập 29 - Trang 720-724 - 2005
Koujin Takeda, Tomohiro Sasamoto, Hidetoshi Nishimori
Characterization of a series of high-quality wide GaAs quantum wells
Physica E: Low-dimensional Systems and Nanostructures - Tập 40 - Trang 1059-1061 - 2008
D.R. Luhman, W. Pan, D.C. Tsui, L.N. Pfeiffer, K.W. Baldwin, K.W. West
Tilted field effects in quantum Hall multilayers
Physica E: Low-dimensional Systems and Nanostructures - Tập 12 - Trang 129-131 - 2002
D.P. Druist, E.G. Gwinn, K.D. Maranowski, A.C. Gossard
Hot phonon-assisted electron resonant tunnelling through a donor level in a quantum well
Physica E: Low-dimensional Systems and Nanostructures - Tập 2 - Trang 191-194 - 1998
P Král, F.W Sheard, F.F Ouali, D.N Hill, A.V Akimov, L.J Challis
Optical and electronic properties of a singly ionized double donor confined in coupled quantum dot-rings
Physica E: Low-dimensional Systems and Nanostructures - Tập 151 - Trang 115736 - 2023
N. Hernández, R.A. López-Doria, M.R. Fulla
Magnetic field controlled electron transport in a thin cylinder
Physica E: Low-dimensional Systems and Nanostructures - Tập 41 - Trang 1439-1444 - 2009
Santanu K. Maiti
Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
Physica E: Low-dimensional Systems and Nanostructures - Tập 7 - Trang 976-980 - 2000
T Omiya, F Matsukura, T Dietl, Y Ohno, T Sakon, M Motokawa, H Ohno
Transient dynamics of pulse-driven memristors in the presence of a stable fixed point
Physica E: Low-dimensional Systems and Nanostructures - Tập 114 - Trang 113561 - 2019
Valeriy A. Slipko, Yuriy V. Pershin
Strain engineering in novel α-SbP binary material with tensile-robust and compress-sensitive band structures
Physica E: Low-dimensional Systems and Nanostructures - Tập 128 - Trang 114623 - 2021
Ying Shu, Zongyu Huang, Huating Liu, Yujie Liao, Fei Liu, Xiang Qi, Jianxin Zhong
All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility
Physica E: Low-dimensional Systems and Nanostructures - Tập 145 - Trang 115480 - 2023
Niraj Kumar Singh, Monika Kumari, Manodipan Sahoo
Tổng số: 5,237   
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