Effect of source size and emission time on the p–p momentum correlation function in the two-proton emission processNuclear Science and Techniques - Tập 31 - Trang 1-6 - 2020
Long Zhou, De-Qing Fang
The effect of source size and emission time on the proton–proton (p–p) momentum correlation function ($$C_\mathrm{pp}(q)$$) has been studied systematically. Assuming a spherical Gaussian source with space and time profile according to the function $$S(r,t)\sim \exp (-r^2/2r_{0}^{2}-t/\tau )$$ in the correlation function calculation code (CRAB), the results indicate that one $$C_\mathrm{pp}(q)$$ di...... hiện toàn bộ
Simulation study on cosmic ray background at large zenith angle based on GRANDProto35 coincidence array experimentNuclear Science and Techniques - Tập 32 - Trang 1-11 - 2021
Xiang-Li Qian, Xu Wang, Hui-Ying Sun, Zhen Wang, Olivier Martineau-Huynh
Neutrino detection in the 100 PeV energy region is the ultimate means of studying the origin of ultra-high-energy cosmic rays, in which the large radio detection array giant radio array for neutrino detection (GRAND) project aims to use to decipher this century-old problem. The GRANDProto35 compact array is a microform of 35 radio prototype detectors for the GRAND experiment, which verifies the re...... hiện toàn bộ
Theoretical prediction of radiation-enhanced diffusion behavior in nickel under self-ion irradiationNuclear Science and Techniques - Tập 31 - Trang 1-11 - 2020
Xiao-Ya Chen, A-Li Wen, Cui-Lan Ren, Cheng-Bin Wang, Wei Zhang, He-Fei Huang, Zhi-Wen Chen, Ping Huai
The enhanced diffusion in materials under irradiation plays an important role in the long-term microstructural evolution. In this work, the self-ion irradiation in nickel was used as a model system to study the effect of radiation-enhanced diffusion on the implanted ion profiles. Initially, the depth profiles of vacancies and implanted ions for nickel self-ion irradiation with ion energies up to 1...... hiện toàn bộ
Signal modeling and impulse response shaping for semiconductor detectorsNuclear Science and Techniques - Tập 33 - Trang 1-11 - 2022
Xue-Yuan Wang, Jian-Bin Zhou, Ming Wang, Huai-Ping Wang, Xu Hong, Yi Liu, Ping Huang
The output-signal models and impulse response shaping (IRS) functions of semiconductor detectors are important for establishing high-precision measurement systems. In this paper, an output-signal model for semiconductor detector systems is proposed. According to the proposed model, a multistage cascade deconvolution IRS algorithm was developed using the C-R inverse system, R-C inverse system, and ...... hiện toàn bộ
Assessment of the power deposition on the MEGAPIE spallation target using the GEANT4 toolkitNuclear Science and Techniques - Tập 30 - Trang 1-7 - 2019
Abdesslam Lamrabet, Abdelmajid Maghnouj, Jaouad Tajmouati, Mohamed Bencheikh
This work aims at evaluating the reliability of the GEANT4 (GEometry ANd Tracking 4) Monte Carlo (MC) toolkit in calculating the power deposition on the Megawatt Pilot Experiment (MEGAPIE), the first liquid–metal spallation target worldwide. A new choice of codes to study and optimize this target is provided. The evaluation of the GEANT4 toolkit is carried out in comparison with the MCNPX and FLUK...... hiện toàn bộ
Characterization of molten 2LiF–BeF2 salt impregnated into graphite matrix of fuel elements for thorium molten salt reactorNuclear Science and Techniques - Tập 30 - Trang 1-8 - 2019
Hong-Xia Xu, Jun Lin, Ya-Juan Zhong, Zhi-Yong Zhu, Yu Chen, Jian-Dang Liu, Bang-Jiao Ye
The impregnation behavior of molten 2LiF–BeF2 (FLiBe) salt into a graphite matrix of fuel elements for a solid fuel thorium molten salt reactor (TMSR-SF) at pressures varying from 0.4 to 1.0 MPa was studied by mercury intrusion, molten salt impregnation, X-ray diffraction, and scanning electron microscopy techniques. It was found that the entrance pore diameter of the graphite matrix is less than ...... hiện toàn bộ
Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devicesNuclear Science and Techniques - Tập 27 - Trang 1-7 - 2016
Qian-Qiong Wang, Hong-Xia Liu, Shu-Peng Chen, Shu-Long Wang, Chen-Xi Fei, Dong-Dong Zhao
This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors (nMOSFETs) in silicon-on-insulator (SOI) technology. Using the subthreshold separation technology, the factor causing the threshold voltage shift was divided into two parts: trapped oxide charges and interface states, the effects of which are presented und...... hiện toàn bộ