Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Reflection extended x‐ray absorption fine‐structure measurements on Ni/C and NixSiy/C multilayered reflection coatings
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 6 Số 4 - Trang 2182-2187 - 1988
Hedser van Brug, M.J. van der Wiel, Ronald van der Pol, J. Verhoeven, G. van der Laan, J. B. Goedkoop
Epitaxial growth of Co3O4 on CoO(100)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 14 Số 3 - Trang 1637-1642 - 1996
G. A. Carson, M. H. Nassir, M. A. Langell
Under mildly oxidizing ultrahigh vacuum conditions, it is possible to form on top of CoO(100) single crystal substrates, thin films that have higher oxygen content but that preserve the overall symmetry of the CoO(100) low-energy electron diffraction pattern. X-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy (HREELS) data indicate that the epitaxial film ... hiện toàn bộ
Aggregation structure and surface properties of immobilized organosilane monolayers prepared by the upward drawing method
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 12 Số 4 - Trang 2530-2536 - 1994
Shouren Ge, Atsushi Takahara, Tisato Kajiyama
Octadecyltrichlorosilane [OTS, CH3(CH2)17SiCl3] and [2-(perfluorooctyl)ethyl] trichlorosilane [FOETS, CF3(CF2)7CH2CH2SiCl3] monolayers were prepared on a water surface. The monolayers of OTS and FOETS amphiphiles were polymerized to form a Si–O–Si linkage on the water subphase. The polymerized monolayers were transferred onto a glass plate or silicon wafer surface by the upward drawing method and ... hiện toàn bộ
X-ray fluorescence measurements of x-ray absorption near edge structure at the Si, P, and S L edges
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 11 Số 5 - Trang 2694-2699 - 1993
M. Kasrai, Zhanfeng Yin, G.M. Bancroft, K. H. Tan
High-resolution (≤0.2 eV) x-ray absorption near edge structure (XANES) spectra have been recorded at the Si, P, and S 2p edges of several compounds using microchannel plates to detect the ultrasoft x-ray fluorescence after 2p excitation or ionization. The fluorescence yield (FY) XANES of SiO2, Si, InP, FeS2, and Na2S2O3 are of at least as good quality as the XANES recorded using total electron yie... hiện toàn bộ
Silicon-based group IV heterostructures for optoelectronic applications
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 14 Số 3 - Trang 913-918 - 1996
Richard Soref
This article presents an overview of trends and progress in group IV heterostructures for optoelectronics. The outlook is good in electronics because the commercialization of SiGe/Si heterotransitors is proceeding nicely. However, the pace of progress is slower in SiGe/Si photonics. This article covers five innovative topics in an effort to enhance the development of heterostructure photonics: (1)... hiện toàn bộ
GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 2 Số 2 - Trang 436-440 - 1984
J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, Ian Robinson
GexSi1−x films are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x-ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. GexSi1−x films with x≤0.5 can be grown free of dislocations by means of strained-layer epitaxy where lattice misma... hiện toàn bộ
Nature of the use of adventitious carbon as a binding energy standard
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 13 Số 3 - Trang 1239-1246 - 1995
Tery L. Barr, Sudipta Seal
It has become common practice to employ, as a binding energy reference for x-ray photoelectron spectroscopy studies on nonconductive materials, the C(1s) spectra of the ubiquitous (adventitious) carbon that seems to exhibit an instantaneous presence on all air exposed materials. Despite this commonality, surface scientists, including many practitioners, have expressed substantial concerns about th... hiện toàn bộ
Steady-state catalytic C–C bond formation on reduced TiO2 surfaces
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 15 Số 3 - Trang 1586-1591 - 1997
Victor S. Lusvardi, Keith G. Pierce, Mark A. Barteau
Previous temperature programmed desorption (TPD) experiments on reduced TiO2 (001) surfaces have demonstrated that alkynes are converted to the corresponding aromatic products with high selectivity. This reaction also represents the first example of catalytic assembly of carbon–carbon bonds on a metal oxide surface in ultrahigh vacuum. Although the catalytic formation of carbon–carbon bonds on sin... hiện toàn bộ
A gradational lead screw dry vacuum pump
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 18 Số 3 - Trang 1045-1047 - 2000
Isao Akutsu, Takanori Matsuoka, Masayoshi Ozaki, T. Kyuko, S. Miyashita, T. Ozawa, Masaaki Naka, Hiroaki Ohnishi, Y. Narahara, G. Horikoshi
Dry vacuum pumps for semiconductor processes: Guidelines for primary pump selection
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 18 Số 4 - Trang 1777-1781 - 2000
Philip A. Lessard
Each of the many processes used for the production of ultralarge scale integrated devices or flat panel displays has its own chemical and physical requirements. Many require a vacuum environment that may range from slightly below atmospheric pressure to ultrahigh vacuum. Requirements for system cleanliness often dictate an oil-free pumping system. This article discusses each of the process classes... hiện toàn bộ
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