Journal of Materials Synthesis and Processing

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Microstructure and Mechanical Properties of A Spray-Atomized and Deposited Al-Cu-Mg-Ag Alloy
Journal of Materials Synthesis and Processing - Tập 7 - Trang 365-372 - 1999
T. S. Srivatsan, L. Del Castillo, B. G. Ravi, Meslet Al-Hajri, E. J. Lavernia
In this paper, the results of a recent study designed to improve our understanding of the hardness, tensile properties, cyclic fatigue response, and fracture characteristics of a spray-atomized and deposition-processed Al-Cu-Mg-Ag Alloy are presented. Specimens of the alloy were deformed to failure at ambient temperature under both quasi-static and cyclic stress amplitude-controlled conditions. Th...... hiện toàn bộ
Preface
Journal of Materials Synthesis and Processing - Tập 6 Số 5 - Trang 301-301 - 1998
Synthesis and Characterization of a Free-Standing, One-Dimensional, Al-Cu/SiC-Based Functionally Graded Material
Journal of Materials Synthesis and Processing - Tập 10 - Trang 75-81 - 2002
M. Gupta, M. O. Lai, T. S. Srivatsan
In this research paper the synthesis of aluminum-copper/silicon carbide–based (Al-Cu/SiC) functionally gradient material using the innovative technique of gradient slurry disintegration and deposition is presented and discussed. Using the gradient slurry disintegration and deposition technique a gradient of SiC was established using an initial weight percentage of 15%. Results of the synthesis wer...... hiện toàn bộ
Interfacial Microstructure and Reaction Phases of Solid State Bonded at SiC/V Joints
Journal of Materials Synthesis and Processing - Tập 6 - Trang 387-392 - 1998
T. Fukai, M. Naka, J. C. Schuster
SiC was bonded to SiC using V foil at temperatures ranging from 1473 K to 1673 K for 1.8 to 64.8 × 103 s and 30 MPa in vacuum. Interfacial reactions and microstructures were investigated using electron probe microanalyser and X-ray diffractometer. SiC begins to react with V at temperatures above 1473 K. Granular V2C phase was formed at the V side of the reaction zone, while a layer of V3Si phase w...... hiện toàn bộ
Selective Formation of Titanium Silicide by Chemical Vapor Deposition Using Titanium Halides and Silicon Wafer as the Precursors
Journal of Materials Synthesis and Processing - - 1998
Chi-Young Lee
Titanium silicide thin films were formed on Si substrate by reaction of TiX 4 (X=C1, Br) with Si under different experimental conditions. The Si consumption and titanium silicide obtained were calculated by the film thickness. In some reactions, titanium silicide thin film was found not only on the Si substrates but also on the SiO2 wall at the outlet of the reaction chamber. The quantity of Si co...... hiện toàn bộ
Editor's Note
Journal of Materials Synthesis and Processing - - 2000
Zuhair A. Munir
Dispersion and Rheological Properties of Alumina/Zirconia Slurries with Methyl Isobutyl Ketone/Ethanol Solvents
Journal of Materials Synthesis and Processing - Tập 10 - Trang 237-244 - 2002
H. C. Park, S. Y. Yoon, Y. B. Lee, B. K. Kim, R. Stevens
The dispersion and rheological behavior of alumina, zirconia, and alumina/zirconia mixed slurries were investigated using various solvent ratios of methyl isobutyl ketone (MIBK)/ethanol (EtOH), by measuring sedimentation bulk density, particle size distribution, and viscosity. Well-dispersed suspensions were obtained in MIBK-rich solvents with additional dispersant and in EtOH-rich without dispers...... hiện toàn bộ
Mechanisms of the Combustion Synthesis of Aluminum Nitride in High Pressure Nitrogen Atmosphere (2)
Journal of Materials Synthesis and Processing - Tập 7 - Trang 1-6 - 1999
G. J. Jiang, H. R. Zhuang, W. L. Li, F. Y. Wu, B. L. Zhang, X. R. Fu
Based on calculating the free energy α r GΦ m of reactions, the reaction mechanism of combustion synthesis of AlN is possibly the reactions between N2 and Al vapor and/or liquid Al. Other oxides of Al, such as Al2O, AlO, can also react with N2 to form AlN. However, the reaction between liquid Al and N2 as well as the reactions b...... hiện toàn bộ
Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction
Journal of Materials Synthesis and Processing - Tập 7 - Trang 205-207 - 1999
Zhenguo Ji, Huanming Lu, Shiguo Zhang, Duanlin Que, N. Usami, H. Sunamura, Y. Shiraki
Pure-Ge/Si short-period superlattice (SPS) samples consisting of 1.5-monolayer Ge and a 1.4- to 3.8-nm-thick Si layer grown by gas source molecular beam epitaxy (GS-MBE) were studied by double-crystal x-ray diffraction. For SPS with a Si layer less than 2.4 nm, the satellite peak caused by the SPS structure in the rocking curve is quite broad, and no fine structure is found, indicating that there ...... hiện toàn bộ
Optimization of PVD Parameters for the Deposition of Ultrahard Ti–Si–B–N Coatings
Journal of Materials Synthesis and Processing - Tập 7 - Trang 187-193 - 1999
D. V. Shtansky, E. A. Levashov, A. N. Sheveiko, J. J. Moore
Multicomponent Ti–Si–B–N coatings were deposited on high-speed steel (HSS) substrates by reactive magnetron sputtering using a SHS TiB + 20 wt% Si target. The influences of the substrate temperature, bias voltage, and nitrogen partial pressure on the structure and the elemental compositions of the films were studied. The films were characterized by high-resolution transmission electron microscopy ...... hiện toàn bộ
Tổng số: 176   
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