Journal of Materials Synthesis and Processing
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Microstructure and Mechanical Properties of A Spray-Atomized and Deposited Al-Cu-Mg-Ag Alloy
Journal of Materials Synthesis and Processing - Tập 7 - Trang 365-372 - 1999
In this paper, the results of a recent study designed to improve our
understanding of the hardness, tensile properties, cyclic fatigue response, and
fracture characteristics of a spray-atomized and deposition-processed
Al-Cu-Mg-Ag Alloy are presented. Specimens of the alloy were deformed to failure
at ambient temperature under both quasi-static and cyclic stress
amplitude-controlled conditions. Th...
Synthesis and Characterization of a Free-Standing, One-Dimensional, Al-Cu/SiC-Based Functionally Graded Material
Journal of Materials Synthesis and Processing - Tập 10 - Trang 75-81 - 2002
In this research paper the synthesis of aluminum-copper/silicon carbide–based
(Al-Cu/SiC) functionally gradient material using the innovative technique of
gradient slurry disintegration and deposition is presented and discussed. Using
the gradient slurry disintegration and deposition technique a gradient of SiC
was established using an initial weight percentage of 15%. Results of the
synthesis wer...
Interfacial Microstructure and Reaction Phases of Solid State Bonded at SiC/V Joints
Journal of Materials Synthesis and Processing - Tập 6 - Trang 387-392 - 1998
SiC was bonded to SiC using V foil at temperatures ranging from 1473 K to 1673 K
for 1.8 to 64.8 × 103 s and 30 MPa in vacuum. Interfacial reactions and
microstructures were investigated using electron probe microanalyser and X-ray
diffractometer. SiC begins to react with V at temperatures above 1473 K.
Granular V2C phase was formed at the V side of the reaction zone, while a layer
of V3Si phase w...
Selective Formation of Titanium Silicide by Chemical Vapor Deposition Using Titanium Halides and Silicon Wafer as the Precursors
Journal of Materials Synthesis and Processing - - 1998
Titanium silicide thin films were formed on Si substrate by reaction of TiX 4
(X=C1, Br) with Si under different experimental conditions. The Si consumption
and titanium silicide obtained were calculated by the film thickness. In some
reactions, titanium silicide thin film was found not only on the Si substrates
but also on the SiO2 wall at the outlet of the reaction chamber. The quantity of
Si co...
Mechanochemical Synthesis of Double Hydroxides
Journal of Materials Synthesis and Processing - Tập 8 - Trang 251-253 - 2000
It has been demonstrated that the formation of magnesium-aluminium double
hydroxides [Mg(1 − X)Al X (OH)2] X+(A n− X/n ) • m H2O, (A–Cl−, NO− 3, SO2− 4)
occurs during mechanical activation of the mixture of magnesium hydroxide
(brucite) with aluminium chloride, nitrate and sulphate in high-energy
planetary-type activators. The effect of activation time on the formation of the
double hydroxide has ...
Dispersion and Rheological Properties of Alumina/Zirconia Slurries with Methyl Isobutyl Ketone/Ethanol Solvents
Journal of Materials Synthesis and Processing - Tập 10 - Trang 237-244 - 2002
The dispersion and rheological behavior of alumina, zirconia, and
alumina/zirconia mixed slurries were investigated using various solvent ratios
of methyl isobutyl ketone (MIBK)/ethanol (EtOH), by measuring sedimentation bulk
density, particle size distribution, and viscosity. Well-dispersed suspensions
were obtained in MIBK-rich solvents with additional dispersant and in EtOH-rich
without dispers...
Mechanisms of the Combustion Synthesis of Aluminum Nitride in High Pressure Nitrogen Atmosphere (2)
Journal of Materials Synthesis and Processing - Tập 7 - Trang 1-6 - 1999
Based on calculating the free energy α r GΦ m of reactions, the reaction
mechanism of combustion synthesis of AlN is possibly the reactions between N2
and Al vapor and/or liquid Al. Other oxides of Al, such as Al2O, AlO, can also
react with N2 to form AlN. However, the reaction between liquid Al and N2 as
well as the reactions between other oxides of Al and N2 are not the main
reaction mechanism....
Study of a Pure-Ge/Si Short-Period Superlattice by X-Ray Double Crystal Diffraction
Journal of Materials Synthesis and Processing - Tập 7 - Trang 205-207 - 1999
Pure-Ge/Si short-period superlattice (SPS) samples consisting of 1.5-monolayer
Ge and a 1.4- to 3.8-nm-thick Si layer grown by gas source molecular beam
epitaxy (GS-MBE) were studied by double-crystal x-ray diffraction. For SPS with
a Si layer less than 2.4 nm, the satellite peak caused by the SPS structure in
the rocking curve is quite broad, and no fine structure is found, indicating
that there ...
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