Applied Physics A Solids and Surfaces
Công bố khoa học tiêu biểu
* Dữ liệu chỉ mang tính chất tham khảo
Sắp xếp:
Tensile behavior and microstructural evolution of TiMoZrV HEAs: a molecular dynamics study
Applied Physics A Solids and Surfaces - Tập 130 - Trang 1-10 - 2024
Crystallographic models of TiZrVMo HEAs were established here for six distinct grain sizes ranging from 7.4 to 23.5 nm. A consistent rise in tensile stress maxima is observed with diminishing grain size. Remarkably, the TiZrVMo composition demonstrates its optimal performance at a grain size of 12.4 nm. During tensile processes, TiZrVMo displays pronounced atomic plane slip and an increase in intr...... hiện toàn bộ
AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer
Applied Physics A Solids and Surfaces - Tập 127 - Trang 1-7 - 2021
We design a back-illuminated p–i–n–i–n separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiode (APD) with a low Al-content p-graded AlxGa1-xN layer and a high/low Al-content AlGaN multiplication layer. Simultaneously, an III-nitride AlN/Al0.64Ga0.36 N distributed Bragg reflector (DBR) structure is inserted to improve the solar-blind photoresponse for the designed APD. T...... hiện toàn bộ
Pulsed laser deposition of ZnO thin films decorated with Au and Pd nanoparticles with enhanced acetone sensing performance
Applied Physics A Solids and Surfaces - Tập 123 Số 4 - 2017
A new tubular hot-wire CVD for diamond coating
Applied Physics A Solids and Surfaces - Tập 123 - Trang 1-7 - 2017
A new tubular hot-wire chemical vapor deposition (HWCVD) system using a tubular quartz vacuum chamber has been fabricated. The filaments in this system can heat the substrate and act as a gas activator and thermally activator for gas species at the same time. The nano- and microcrystalline diamond coatings on the surface of steel AISI 316 substrates have been grown. To assess the results, SEM and ...... hiện toàn bộ
Microstructure of annealed low-temperature-grown GaAs layers
Applied Physics A Solids and Surfaces - Tập 53 - Trang 141-146 - 1991
The crystal structure and orientation of As precipitates in annealed low-temperature GaAs (LT-GaAs) layers have been investigated by transmission electron microscopy. Three types of As precipitates were identified in layers grown by molecular beam epitaxy at substrate temperatures from 180° to 210° C. In the monocrystalline LT-GaAs layers small “pseudocubic” As precipitates (2–3 nm diameter) coher...... hiện toàn bộ
Formation of nanocavities in dielectrics: influence of equation of state
Applied Physics A Solids and Surfaces - Tập 92 - Trang 837-841 - 2008
Tight focusing of a sub-picosecond laser pulse in a transparent dielectric provides a mean for localized deposition and plasma formation. A micro-explosion in a confined geometry results in a sub-micron cavity formation. Our numerical simulations show the cavity size is strongly dependent on the parameters of the equation of state such as the Grüneisen coefficient or the latent heat of sublimation...... hiện toàn bộ
Caloric and isothermal equations of state of solids: empirical modeling with multiply broken power-law densities
Applied Physics A Solids and Surfaces - Tập 126 - Trang 1-13 - 2020
Empirical equations of state (EoSs) are developed for solids, applicable over extended temperature and pressure ranges. The EoSs are modeled as multiply broken power laws, in closed form without the use of ascending series expansions; their general analytic structure is explained and specific examples are studied. The caloric EoS is put to test with two carbon allotropes, diamond and graphite, as ...... hiện toàn bộ
The discovery of a third breakdown: phenomenon, characterization and applications
Applied Physics A Solids and Surfaces - Tập 129 - Trang 1-15 - 2023
In the history of metal–oxide–semiconductor field effect transistor (MOSFET), the quality of its gate oxide has been a cornerstone of the present semiconductor integrated circuits. The changes of gate dielectrics from conventional SiO2 gate oxide into high-k materials has brought us more challenges in various aspects of transistors, especially the reliability improvement when MOSFET dimension is c...... hiện toàn bộ
Observation of multiferroic character with the correlation of dielectric and optical study in Ho3+ substituted Bi4Ti2FeO12 Aurivillius ceramic
Applied Physics A Solids and Surfaces - Tập 128 - Trang 1-15 - 2022
Ho–substituted Bi4-xHoxTi2FeO12 (x = 0, 0.5, 1.0, 1.5) n = 3 Aurivillius layered perovskite compounds were prepared by a conventional solid-state reaction method. X-ray diffraction study reveals that the compounds exhibited a major orthorhombic structure with the B2cb space group. A plate-like grain with high randomness in the distribution of Ho-modified BTFO compounds was noticed in the SEM studi...... hiện toàn bộ
Effect of chromium substitution on the gamma and neutron radiation shielding properties of calcium hexaferrite nanoparticles
Applied Physics A Solids and Surfaces - Tập 129 - Trang 1-9 - 2023
For the first time, chromium substituted calcium hexaferrite (CaCr
$$_{x}$$
Fe
$$_{12-x}$$
O
$$_{19}$$
...... hiện toàn bộ
Tổng số: 15,068
- 1
- 2
- 3
- 4
- 5
- 6
- 10