SENSORS, 2002 IEEE
Cơ quản chủ quản: N/A
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New surface acoustic wave gas sensor of the mass-sensitive type sensitive to the thermal properties of gases
Tập 1 - Trang 372-375 vol.1
The basic principles of a new surface acoustic wave (SAW) gas sensor are described. Being essentially a sensor of the mass-sensitive type, the proposed device possesses certain features of the thermometric SAW sensors and is not only sensitive to the vapors of volatile substances, but capable of detecting gases by their thermal properties as well. This principles consists of making a certain delay......
#Surface acoustic waves #Acoustic waves #Gas detectors #Gases #Temperature sensors #Sensor phenomena and characterization #Thermal sensors #Sensor systems #Surface acoustic wave devices #Acoustic sensors
The wavelength sensor using optical directional coupler
Tập 1 - Trang 83-85 vol.1
This paper proposes a wavelength sensor based on an optical directional coupler. The finite-difference time-domain (FDTD) method is used to calculate of the light intensity propagating thorough the structure, and to find the appropriate dimensions of the structure. The device with the width and thickness of 0.4 /spl mu/m/spl times/0.6 /spl mu/m, which corresponds to the coupling length of 40 /spl ......
#Optical sensors #Directional couplers #Optical propagation #Finite difference methods #Optical refraction #Optical variables control #Time domain analysis #Optical coupling #Refractive index #Signal resolution
Phát triển cảm biến vi từ trường dạng lưới phẳng mới cho việc kiểm tra chất lượng vật liệu mạ điện Dịch bởi AI
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Bài báo này đã báo cáo về công việc phát triển một cảm biến vi từ trường dạng lưới phẳng mới nhằm kiểm tra chất lượng của các vật liệu mạ điện. Cảm biến này phù hợp với việc kiểm tra chất lượng của các vật liệu mạ điện. Kết quả thu được từ mô hình phân tích về việc tính toán điện trở chuyển tiếp của cảm biến đã được thảo luận. Điện trở chuyển tiếp được sử dụng để kiểm tra chất lượng vật liệu mạ đi......
#Kiểm tra #Tính chất vật liệu #Điện trở bề mặt #Vi từ tính #Đo điện trở #Cuộn dây #Cảm biến từ #Vật liệu dẫn điện #Mô hình phân tích #Độ dẫn điện
Can microTAS be alternatives for sensors?
Tập 1 - Trang 680-683 vol.1
In a brief introduction it is described how sensors and microTAS both attempt to meet the industrial need for in-situ monitoring in a different way. As examples of microTAS with monitoring capabilities a plasma emission detector and a bioreactor are presented.
#Chemical sensors #Biosensors #Electrodes #Educational institutions #Chemical and biological sensors #Monitoring #Plasma chemistry #Plasma measurements #Plasma applications #Gas detectors
Optical and electrical gas sensing properties of In/sub x/O/sub y/N/sub z/ films
Tập 1 - Trang 623-626 vol.1
In this paper we describe the optical and electrical gas sensing properties of In/sub x/O/sub y/N/sub z/ films promoted by an ultra-thin gold overlayer. We have fabricated In/sub x/O/sub y/N/sub z/ films with a nanocrystalline porous structure by RF-sputtering in Ar/N/sub 2/ followed by an annealing process. Gold particles with 20-30 nm diameter on top of the In/sub x/O/sub y/N/sub z/ films have b......
#Optical films #Optical sensors #Temperature sensors #Absorption #Wavelength measurement #Gold #Hydrogen #Temperature measurement #Fluid flow measurement #Temperature distribution
Organic molecular thin films as gas sensors
Tập 2 - Trang 1144-1147 vol.2
In this paper we will present some interesting data on the gas sensitivity of very thin films of metal phthalocyanine (as copper phthalocyanine, CuPc) towards NO/sub 2/ at very low concentration (ppb). A thermal treatment following the deposition strongly enhances the gas sensitivity. We will relate this high gas sensitivity to the surface morphology of the film. In fact atomic force microscopy da......
#Thin film sensors #Gas detectors #Thermal force #Rough surfaces #Surface roughness #Surface morphology #Surface treatment #Atomic force microscopy #Transistors #Copper
High performance photodetector for modulated lighting - high sensitivity, high selectivity, high suppression of background, and wide dynamic range
Tập 2 - Trang 1456-1461 vol.2
A new sensing scheme for high-sensitivity and wide-dynamic-range position detection is presented. A correlation circuit and a current-mode suppression circuit of a constant illumination allow high sensitivity, high selectivity, and high suppression of a background illumination. A logarithmic-response circuit is employed to avoid saturation for wide dynamic range. The photodetector can quickly dete......
#Circuits #Lighting #Dynamic range #Detectors #Optical modulation #Humans #Eyes #Legged locomotion #Filters #Laser beams
A high sensitive Fabry-Perot shear stress sensor employing flexible membrane and double SU-8 structures
Tập 2 - Trang 969-972 vol.2
This paper reports a novel shear stress sensor utilizing flexible membrane and double SU-8 resist structures as a Fabry-Perot interferometer. Through UV lithography on thick resist, the surface roughness of the reflection surface was better than 7 nm (Ra value trough 10*10 /spl mu/m/sup 2/ area), suitable for optical application. A single mode optical fiber was employed for detecting the displacem......
#Stress #Biomembranes #Resists #Rough surfaces #Surface roughness #Fabry-Perot interferometers #Lithography #Optical reflection #Optical interferometry #Optical sensors
A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300/spl deg/C)
Tập 2 - Trang 1401-1406 vol.2
The design of a 5 V fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous com......
#Hall effect devices #Temperature sensors #Magnetic sensors #Doping #Magnetic field measurement #Low-frequency noise #Voltage #Geometry #Thin film sensors #Switches
Silicon micromechanical structures fabricated by electrochemical process
Tập 1 - Trang 575-579 vol.1
Silicon (Si) micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon (PS) and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the PS layers with diluted KOH at room temperature does not cause damage in remaining Si microstructures which have less than 1 /spl mu/m thickness controlled by the anodiza......
#Silicon #Micromechanical devices #Electrochemical processes #Hydrogen #Ion implantation #Annealing #Fabrication #Microstructure #Temperature control #Thickness control