Proceedings of the 2nd IEEE Conference on Nanotechnology
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Scanning probe lithography with real time position control interferometer
- Trang 13-15
We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce smoo......
#Position control #Interferometric lithography #Scanning probe microscopy #Oxidation #Optical interferometry #Atomic force microscopy #Silicon #Prototypes #Laser feedback #Laser stability
Fabrication and characterization of THz plasmonic filter
- Trang 229-231
Terahertz imaging systems have applications for explosives detection, aircraft guidance and landing in zero-visibility weather condition, as well as terrestrial and astronomical remote sensing. These critical applications need a variety of optical elements in the THz frequency, which has yet to be explored. In this paper, we demonstrate a high pass THz filter which utilizes the lowered plasma freq......
#Plasmons #Optical filters #Frequency #Plasma properties #Optical device fabrication #Submillimeter wave filters #Optical imaging #Explosives #Aircraft #Remote sensing
An improved three-state master equation model for capacitively coupled single-electron transistor
- Trang 483-486
In this paper, we develop an improved semi-classical steady-state model for capacitively coupled single-electron transistor (SET). This SET model is based on the three-state steady-state master equation, but has some revision at different device parameters, and is thus called the improved three-state master equation model. We calculate I/sub DS/-U/sub DD/, I/sub DS/-U/sub G/, and G/sub DS/-U/sub D......
#Single electron transistors #Circuit simulation #Single electron devices #Steady-state #Voltage #Differential equations #SPICE #Coupling circuits #Numerical simulation #Capacitance
Assembly of electrospun nanofibers into crossbars
- Trang 283-286
We report an approach for the hierarchical assembly of nanofibers into crossbar nanostructures. The polymer nanofibers are created through electrospinning process with diameters ranging in 10-80 nm and lengths of up to centimeters. By controlling the electrostatic field and the polymer rheology of the nanofibers, they can be assembled into parallel periodic arrays.
#Assembly #Polymers #Electrostatics #Nanostructures #Polyethylene #Mechanical engineering #Nanowires #Nanotubes #Photonics #Fabrication
Extending differential electrophoresis to measure nanoparticle forces
- Trang 343-345
A method is being developed for measuring interparticle forces between nanoparticles. Previously, the method of differential electrophoresis has been used to measure forces between micron size particles with different zeta potentials. The method used video microscopy to measure colloidal trajectories, and the electrokinetic equations to interpret the forces. The developments that will enable nanop......
#Electrokinetics #Force measurement #Particle measurements #Size measurement #Nanoparticles #Physics #Atomic measurements #Atomic force microscopy #Equations #Stability
A new structure of photonic bandgaps: metamorphosis
- Trang 165-167
Photonic crystals with two different length scales are known to have a simple scaling property under the interpolation parametrized by a length scale s that the frequencies of eigenmodes scale by the inverse of s. We found that photonic crystals can have a nontrivial transformation property of metamorphosis under a certain interpolation. During the metamorphosis, the first bandgap that is present ......
#Photonic band gap #Interpolation #Lattices #Photonic crystals #Dielectric constant #Frequency #Lighting control #Geometry #Electrons #Electrostatics
Quasi-static/cyclic loading tests of nanometric SiO/sub 2/ wires using AFM technique for NEMS designs
- Trang 51-54
This research carried out intermediate temperature quasi-static/cyclic loading tests of nanometric silicon dioxide wires (SiO/sub 2/ nano-wires) using AFM, for revealing specimen size and temperature effects on mechanical properties and fatigue lives of the wires. Four kinds of the SiO/sub 2/ nano-wires with widths from 230 nm to 800 nm were prepared by a thermal oxidation of nanometric single cry......
#Testing #Wires #Fatigue #Silicon compounds #Capacitive sensors #Mechanical factors #Oxidation #Thermal stresses #Temperature distribution #Frequency
Quantum Monte Carlo simulation of the spectral density within single electron transistors
- Trang 115-117
A quantum Monte-Carlo simulation is made for the symmetric Anderson model. The Matsubara function is used for the determination of the temporal dependence of the retarded Green function. The conductance of the single electron transistors is calculated using a Landauer-type formula.
#Single electron transistors #Quantum dots #Green function #Quantum computing #Tunneling #Voltage control #Temperature dependence #Image analysis #Frequency #Integral equations
On quantum computing with macroscopic Josephson qubits
- Trang 305-308
The achievements of quantum computation theory, e.g. Shor's factoring algorithm, motivate efforts to realize quantum computers. Among systems proposed for quantum computing, macroscopic superconducting circuits of Josephson junctions appear promising for integration in electronic circuits and large-scale applications. Recently, a superconducting tunnel junction circuit was designed and a sufficien......
#Quantum computing #Josephson junctions #Quantum mechanics #Computation theory #Electronic circuits #Large scale integration #Application software #Superconducting logic circuits #Q factor #Buildings
Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs
- Trang 197-200
We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is tak......
#Semiconductor process modeling #Threshold voltage #MOSFETs #Fluctuations #Doping profiles #Potential well #Poisson equations #Charge carrier density #Silicon #Standards development