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Proceedings of the 2nd IEEE Conference on Nanotechnology

 

 

 

 

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3D structuring of c-Si using porous silicon as sacrificial material
- Trang 33-36
U.M. Mescheder, A. Kovacs, A. Fahad, R. Huster
A new three dimensional structuring technique for crystalline silicon is investigated. Using porous Si with a typical pore size of a few nanometers three dimensional shapes can be formed. The shape of the structures is provided by an anodisation process in which crystalline Si is transformed to nanoporous Si. Control of the local depth of the 3D structures is achieved by appropriate 2D masking str... hiện toàn bộ
#Silicon #Etching #Lithography #Crystalline materials #Crystallization #Shape control #Current density #Optical films #Anisotropic magnetoresistance #Plastics
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)
- 2002
Presents the front cover of the proceedings record.
A single-electron-transistor-based analog/digital converter
- Trang 487-490
C.H. Hu, J.F. Jiang, Q.Y. Cai
We propose a novel analog/digital (A/D) converter based on single-electron transistors (SETs) in this paper. In the proposed A/D converter, the core cell is a SET module, composed of capacitive dividers and SET-based universal literal gates. The SET-based universal literal gate is similar to the well-known Tucker's inverter (J.R. Tucker, J. Appl. Phys., vol. 72, no. 9, pp. 4399-4413, 1992), but he... hiện toàn bộ
#Analog-digital conversion #Inverters #Electrons #Switches #Character generation #Hysteresis #Circuit simulation #Low voltage
Standing ultrasonic wave separator
- Trang 453-455
V.S. Stenkamp, L.J. Bond, W.E. TeGrotenhuis, J.W. Grate, M.D. Flake
This paper presents the design and preliminary results for a flow-through particle separation unit using standing ultrasonic waves. The results indicate that good separation is obtained at residence times as low as 14 seconds and liquid velocities of 2 mm/sec. The effects of thermally and acoustically induced streaming are discussed. The unit is being used to assess the effective ranges and limits... hiện toàn bộ
#Particle separators #Chemical technology #Pharmaceutical technology #Filtration #Laboratories #Chemical industry #Frequency #Glass #Bonding #Petroleum industry
A frequency-selective terahertz radiation detector based on a semiconductor superlattice with a resonator
- Trang 107-109
A. Raspopin, Hong-Liang Cui
We propose the new design of the terahertz detector, which must have frequency selection property and operate at room temperature. The idea is based on a standing wave enhancement of detector responsivity. The detector contains lateral semiconductor superlattice, broadband bow tie THz antenna and THz resonator. As compared with well-known variant we change a technology of antenna attachment to the... hiện toàn bộ
#Frequency #Radiation detectors #Semiconductor superlattices #Submillimeter wave technology #Broadband antennas #Electrons #Voltage #Millimeter wave technology #Metallic superlattices #Physics
Chế tạo lỗ mở kích thước nhỏ hơn bước sóng cho đầu dò quang gần trên dải cantilever Dịch bởi AI
- Trang 173-176
S.S. Choi, M.Y. Jung, J.W. Kim, J.H. Boo
Lỗ mở silicon oxit kích thước nano trên dải cantilever đã được chế tạo thành công như một đầu dò quang gần. Nhiều quy trình bán dẫn đã được sử dụng để chế tạo lỗ mở có kích thước nhỏ hơn bước sóng. Quy trình khắc chọn lọc anisotropic của nền Si bằng dung dịch kiềm, sau đó là quá trình oxy hóa phụ thuộc vào phương tinh thể, khắc plasma anisotropic và khắc oxit isotropic đã được thực hiện. Các dải c... hiện toàn bộ
#Optical device fabrication #Apertures #Probes #Anisotropic magnetoresistance #Geometrical optics #Optical arrays #Plasma applications #Dry etching #Wet etching #Silicon
The richness of the dispersion relation of photonic crystals: application to superprism effect and other remarkable effects
- Trang 219-222
S. Enoch, G. Tayeb
Using the dispersion relation of the Bloch modes inside photonic crystals, we develop a simple method to analyse and predict several effects such as the so-called superprism effect or negative refraction. These tools are also shown to be useful in the design of structures based on photonic crystals, for example, to canalize the emission in a small angular domain.
#Dispersion #Photonic crystals #Optical refraction #Optical propagation #Electronic mail #Irrigation #Diffraction gratings #Computational modeling #Crystalline materials #Optical materials
Evaluation of program, erase and retention times of flash memories with very thin gate dielectric
- Trang 247-250
G. Iannaccone
We have developed a code for the simulation of the complete program and erase process of a flash EEPROM via direct Fowler-Nordheim tunneling from the channel. The code is based on the solution of the Poisson-Schrodinger equation in one dimension, and on the computation of the tunneling current from the detailed solution of the barrier transmission problem. We are able to compute the program, erase... hiện toàn bộ
#Dielectrics #Nonvolatile memory #EPROM #Schrodinger equation #Tunneling #Voltage #Flash memory #Design optimization #Electrons #Charge carrier processes
An RF circuit model for carbon nanotubes
- Trang 393-396
P.J. Burke
We develop an rf circuit model for single walled carbon nanotubes for both dc and capacitively contacted geometries. By modeling the nanotube as a nano-transmission line with distributed kinetic and magnetic inductance as well as distributed quantum and electrostatic capacitance, we calculate the complex, frequency dependent impedance for a variety of measurement geometries. Exciting voltage waves... hiện toàn bộ
#Radio frequency #Circuits #Carbon nanotubes #Solid modeling #Geometry #Kinetic theory #Electrostatics #Quantum capacitance #Frequency dependence #Impedance
Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel
- Trang 205-208
Horng-Chih Lin, Meng-Fan Wang, Fu-Ju Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S.M. Sze
The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the app... hiện toàn bộ
#MOSFETs #Nanoscale devices #Fabrication #Voltage #Passivation #Silicides #Annealing #CMOS process #Manufacturing #Contacts