Proceedings of the 2nd IEEE Conference on Nanotechnology
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Scanning probe lithography with real time position control interferometer
- Trang 13-15
We have constructed an integrated SPM and an xy-position interferometer to
properly control the dimensions of the lithography patterns. The tracking error
of xy-dimensional positioning system is about 2 nm accuracy and the positioning
resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and
anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce
smoo...
#Position control #Interferometric lithography #Scanning probe microscopy #Oxidation #Optical interferometry #Atomic force microscopy #Silicon #Prototypes #Laser feedback #Laser stability
Recent progress of semiconductor photonic crystals
- Trang 217-218
Recent progresses in the field of semiconductor photonic crystals, including
three-dimensional and two-dimensional photonic crystals are presented. First,
the fabrication of three-dimensional photonic crystals is reviewed and
experimental results on the introduction of the light emitter into
three-dimensional crystals are reported. Second, two unique devices using
two-dimensional photonic crystals...
#Photonic crystals #Surface emitting lasers #Optical filters #Optical device fabrication #Light emitting diodes #Crystallization #Photonic band gap #Optical control #Optical waveguides #Optical surface waves
Photovoltage spectroscopy and electroluminescence of ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices
- Trang 185-187
The ZnSe/Cd/sub x/Zn/sub 1-x/Se superlattices with non-doping layers, grown by
molecular beam epitaxy, were investigated by electroluminescence and
photovoltage spectroscopy. Green-blue electroluminescence from the quantum wells
has been observed at 77 K and 293 K. Well-resolved peaks attributed to excitonic
absorption, as well as photosensitivity bands corresponding to the Cd/sub
x/Zn/sub 1-x/Se/...
#Spectroscopy #Electroluminescence #Zinc compounds #Molecular beam epitaxial growth #Buffer layers #Substrates #Temperature #Optical buffering #Optical superlattices #Gold
Robust micro-gated carbon nanotube field emitter arrays
- Trang 431-434
An integrated gate (micro-gate) is necessary to enable field emission from
carbon nanotubes (cNTs) at low voltages. We have demonstrated emission from cNTs
grown inside two such types of micro-gated structures, one a gated silicon post,
another having an open aperture. In the first configuration anode currents up to
1 mA (from 0.5 mm/sup 2/ area) were obtained at gate voltages as low as 40 V. In
t...
#Robustness #Carbon nanotubes #Field emitter arrays #Low voltage #Anodes #Electron emission #Silicon #Apertures #Hydrogen #Xenon
Thermal longevity of nano-multilayer magnetic media
- Trang 71-74
A common concern about the use of particles a few nanometers in size is their
stability. This paper addresses a technique for estimating the longevity on the
basis of measurements that can be made in a reasonable time. Using the recently
developed Preisach-Arrhenius model, the decay rate can be quantified using the
chemical potential. Measurements in Co/Pt multilayer media have shown that at
room ...
#Magnetization #Chemicals #Life estimation #Switches #Time measurement #Magnetic field measurement #Magnetic multilayers #Temperature #Atmospheric modeling #Magnetic materials
Piconewton regime measurements of biomolecular interactions by nanomechanical force gauge
- Trang 129-132
A piconewton regime measurement of biomolecular interactions in an aqueous
solution by a novel nanomechanical force gauge (NFG) is presented in this paper.
A highly sensitive nanoscale cantilever with a spring constant, which is
thousand times smaller than that of an atomic force microscope (AFM)
microcantilever, is fabricated by a batch process. The NFG has a capability of
direct reading without ...
#Force measurement #Atomic force microscopy #Springs #Atomic measurements #Electrostatic measurements #Stimulated emission #Thickness control #Silicon #Oxidation #Frequency
Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance
- Trang 243-246
We investigate the role of quantum mechanical space-quantization effects on the
operation of a narrow-width SOI device structure. The presence of a
two-dimensional carrier confinement gives rise to larger average displacement of
the carriers from the interface proper and lower sheet electron density in the
channel region. This, in turn, results not only in a significant increase in the
threshold v...
#Silicon on insulator technology #Leakage current #CMOS technology #Threshold voltage #Degradation #Fabrication #CMOS process #MOSFET circuits #Solid state circuits #Carrier confinement
On quantum computing with macroscopic Josephson qubits
- Trang 305-308
The achievements of quantum computation theory, e.g. Shor's factoring algorithm,
motivate efforts to realize quantum computers. Among systems proposed for
quantum computing, macroscopic superconducting circuits of Josephson junctions
appear promising for integration in electronic circuits and large-scale
applications. Recently, a superconducting tunnel junction circuit was designed
and a sufficien...
#Quantum computing #Josephson junctions #Quantum mechanics #Computation theory #Electronic circuits #Large scale integration #Application software #Superconducting logic circuits #Q factor #Buildings
Nano-scale optical and quantum optical devices based on photonic crystals
- Trang 319-321
We review our theoretical and experimental work on functional optical devices
based on planar photonic crystals. Beside standard photonic applications, these
structures can also be used as building blocks of quantum networks.
#Optical devices #Nanoscale devices #Photonic crystals #Optical refraction #Optical waveguides #Photonic integrated circuits #Stimulated emission #Crystalline materials #Quantum computing #Hardware
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)
- 2002
Presents the front cover of the proceedings record.