Proceedings of the 2nd IEEE Conference on Nanotechnology

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Growth of nano-sized copper seed layer on TiN and TaSiN by new non-toxic electroless plating
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 17-20
R.S. Liu, C.C. You, M.S. Tsai, S.F. Hu, K. Lee, J. Lu
The purpose of this research is to explore the properties of a copper seed layer grown by electroless plating on TiN. We have developed a displacement layer made of amorphous silicon (a-Si) and copper contact displacement process to improve the island structure of copper activated layer which can then be grown directly on the surface of TiN. Furthermore, this research proposes glyoxylic acid as a ...... hiện toàn bộ
#Copper #Tin #Temperature #Electromigration #Conductivity #Filling #Dielectric substrates #Chemistry #Laboratories #Chemicals
Transport simulation of a nanoscale silicon rod field-effect transistor
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 401-404
C. Dwyer, R. Taylor, L. Vicci
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline....... hiện toàn bộ
#Silicon #FETs #Computational modeling #SPICE #Kernel #Logic gates #Self-assembly #Fabrication #Computer architecture #Packaging
Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 205-208
Horng-Chih Lin, Meng-Fan Wang, Fu-Ju Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S.M. Sze
The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the app...... hiện toàn bộ
#MOSFETs #Nanoscale devices #Fabrication #Voltage #Passivation #Silicides #Annealing #CMOS process #Manufacturing #Contacts
Calculating magnetic susceptibility over multiple length scales
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 499-502
A.W. Harter, G. Mohler, R.L. Moore, J.W. Schultz
DC power and radio frequency technology design can benefit from theories which predict magnetic permeability for a composite of nano-microscale magnetic particles in a magnetically neutral host. In this paper, composite permeability is calculated by connecting the microscale physics of the particles to the effective properties of the composite. At the microscale, numerical predictions are performe...... hiện toàn bộ
#Magnetic susceptibility #Micromagnetics #Saturation magnetization #Object oriented modeling #Permeability #Magnetic particles #Magnetic fields #Laboratories #Atmospheric modeling #Magnetic properties
Electrical conduction and magnetic moment of a biased double-wire system
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 425-429
A.Yu. Smirnov, L.G. Mourokh, N.J.M. Horing
We analyze electron transport and magnetic response of a semiconductor double-wire system in the case when the wires are connected to leads in series, with tunnel coupling between them. Explicit analytical expressions for the lead-to-lead current and the average magnetic moment induced by an applied magnetic field are obtained. We show that at low temperature the magnetic response of such a system...... hiện toàn bộ
#Magnetic moments #Magnetic analysis #Magnetic semiconductors #Electrons #Wires #Lead compounds #Couplings #Magnetic fields #Temperature dependence #Paramagnetic materials
Micro/nano liter droplet formation and dispensing by capacitance metering and electrowetting actuation
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 369-372
Hong Ren, R.B. Fair
In this work, a method is presented for dispensing droplets. The method exploits the built-in capacitance of an electrowetting device to meter the droplet volume and control the dispensing process dynamically. A fully automated droplet dispensing device is developed and used to load liquid samples or couple continuous flow to electro-wetting droplet handling. The reproducibility of the dispensing ...... hiện toàn bộ
#Capacitance #Reproducibility of results #Production #Automatic control #Fluid flow control #Process control #Testing #Viscosity #Geometry #Needles
Quantum-coherent transport in coupled quantum-dots
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 333-336
J.P. Bird, M. Elhassan, A. Shailos, C. Prasad, D.K. Ferry, N. Aoki, L.-H. Lin, Y. Ochiai, K. Ishibashi, Y. Aoyagi
The details of electron interference in quantum-dot systems coupled via quantum point contacts (QPCs) is studied via simulation and experiment. In both open and closed coupled systems, one sees transitions from multi- to single-dot behavior, even when the QPCs support several modes. The results also reveal a non-trivial scaling of the conductance fluctuations in quantum-dot arrays, arising from th...... hiện toàn bộ
#Quantum dots #Fluctuations #Interference #Electrons #Tunneling #Materials science and technology #Laboratories #Contacts #Reservoirs #Magnetic fields
New technology for the manufacturing of nanocrystalline materials
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 273-276
J. Nikoloz, M. Archil, C. Roin
For the manufacturing of nanocrystalline materials have been developed several methods. One of the methods is based on fabrication of a metal-organic or a complex compound using appropriate metal salt solutions or their melts. Pyrolysis at 800-900/spl deg/C of an appropriate compound in hydrogen atmosphere obtains a charge of carbide or already fabricated hard metals. The second method is based on...... hiện toàn bộ
#Manufacturing #Nanostructured materials #Inorganic materials #Organic materials #Circuits #Temperature distribution #Atmosphere #Modems #Mechanical factors #Conducting materials
Electron transport in nanoscale bipolar transistors
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 103-106
C.D. Parikh, M.S. Lundstrom
As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models,...... hiện toàn bộ
#Bipolar transistors #Poisson equations #Electron emission #MOSFETs #Physics #Boltzmann equation #Distribution functions #Design automation #Art #Gallium arsenide
Phonon-assisted subband depopulation in semiconductor quantum well laser heterostructures
Proceedings of the 2nd IEEE Conference on Nanotechnology - - Trang 5-8
M.V. Kisin, M.A. Stroscio, G. Belenky, S. Luryi
We study the rate of intersubband electron transitions assisted by LO-phonon emission in type-II InAs/GaSb DQW heterostructure, which models the active region of antimonide-based intersubband cascade laser. We show that in type-II heterostructures with broken-gap band alignment the phonon-assisted process is the most favorable for the fast depopulation of the lower lasing states. The main peak of ...... hiện toàn bộ
#Quantum well lasers #Semiconductor lasers #Tunneling #Gas lasers #Phonons #Quantum computing #Charge carrier processes #Electrons #Reservoirs #Laser transitions
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