Electronic transport and noise in nanoelectronic ballistic N/sup +/-i-N/sup +/ diodes

We present a fully analytical theory for the modeling of the electronic transport and noise properties of ballistic n/sup +/-i-n/sup +/ nanodiodes. The theory includes in a general way the effects of the Pauli exclusion principle and of the long range coulomb interaction. By means of the theory we explore the variety of behaviors exhibited by the current-voltage and the current noise properties for different device parameters (sample length, contact doping). Monte Carlo simulations are used to corroborate the theoretical predictions.