CdS nanoparticles embedded in metal-insulator-semiconductor structures
Proceedings of the 2nd IEEE Conference on Nanotechnology - Trang 265-268
Tóm tắt
Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.
Từ khóa
#Nanoparticles #Metal-insulator structures #Silicon #Semiconductor films #Substrates #Voltage #Capacitance measurement #Hydrogen #Atmosphere #AluminumTài liệu tham khảo
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