Towards understanding persistent photoconductance in doping modulated amorphous silicon

Philosophical Magazine Letters - Tập 60 Số 4 - Trang 171-175 - 1989
A. Hamed1, H. Fritzsche1
1James Franck Institute, The University of Chicago, Chicago, Illinois 60637, U.S.A.

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Tài liệu tham khảo

Agarwal S. C., 1985, Phys. Rev., 32, 8469, 10.1103/PhysRevB.32.8469

Choi S. H., 1987, Phys. Rev., 36, 6479, 10.1103/PhysRevB.36.6479

Hundhausen M., 1985, Phys. Rev., 32, 6655, 10.1103/PhysRevB.32.6655

10.1103/PhysRevB.37.1020

Fritzsche, H., ed. 1989.Amorphous Silicon and Related Materials, 247Singapore: World Scientific.

Kakalios J., 1986, Phil. Mag., 54, 199, 10.1080/13642818608239020

10.1103/PhysRevLett.53.1602

1985, Materials Research Society Proceedings, 37, 29

Kakalios, J. and Jackson, W. B. 1989.Amorphous Silicon and Related Materials, Edited by: Fritzsche, H. 207Singapore: World Scientific.

Kakalios, J. and Street, R. A. 1987.Disordered Semiconductors, Edited by: Kastner, M. A., Thomas, G. A. and Ovshinsky, S. R. 529New York: Plenum.

10.1103/PhysRevLett.59.1037

10.1063/1.89674

10.1063/1.328084

Street R. A., 1987, Phil. Mag., 56, 305, 10.1080/13642818708221319

10.1063/1.339945