Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

Microelectronics Journal - Tập 43 - Trang 611-617 - 2012
R. Sommet1, G. Mouginot2, R. Quere1, Z. Ouarch2, M. Camiade2
1XLIM, University of Limoges, IUT GEII 7, rue Jules Valls 19100 Brive la Gaillarde, France
2UMS, Route dpartementale 128, BP46 91401 Orsay, France

Tài liệu tham khảo

Darwish, 2009, Dependence of GaN HEMT millimeter-wave performance on temperature, IEEE Transactions on Microwave Theory and Techniques, 57, 3205, 10.1109/TMTT.2009.2034050

S.C. Binari, P.B. Klein, T.E. Kazior, Trapping effects in wide-bandgap microwave FETs, in: IEEE MTT-S International Microwave Symposium Digest, 2002, vol. 3 June 2002, pp. 1823–1826.

Kuball, 2002, Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy, IEEE Electron Device Letters, 23, 7, 10.1109/55.974795

Kuzmik, 2002, Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method, IEEE Transactions on Electron Devices, 49, 1496, 10.1109/TED.2002.801430

Joh, 2009, Measurement of channel temperature in GaN high-electron mobility transistors, IEEE Transactions on Electron Devices, 56, 10.1109/TED.2009.2032614

Jardel, 2007, An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR, IEEE Transactions on Microwave Theory and Techniques, 55, 2660, 10.1109/TMTT.2007.907141

Meneghesso, 2009, Anomalous kink effect in GaN high electron mobility transistors, IEEE Electron Device Letters, 30, 100, 10.1109/LED.2008.2010067

〈http://www.ioffe.rssi.ru/SVA/NSM/Semicond/〉.

Sarua, 2007, Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices, IEEE Transactions on Electron Devices, 54, 3152, 10.1109/TED.2007.908874

Prasher, 2001, A scattering acoustic mismatch model for the prediction of thermal boundary resistance, Journal of Heat Transfer, 123, 105, 10.1115/1.1338138

Swartz, 1989, Thermal boundary resistance, Reviews of Modern Physics, 61, 605, 10.1103/RevModPhys.61.605

G. Mouginot, R. Sommet, R. Quere, Z. Ouarch, S. Heckmann, M. Camiade, Thermal and trapping phenomena assessment on AlGaN/GaN microwave power transistor, in: European Microwave Integrated Circuits Conference, 28–30 September 2010.

Reich, 1969, Hot-spot thermal resistance in transistors, IEEE Transactions on Electron Devices, 16, 166, 10.1109/T-ED.1969.16585

ANSYS, 〈www.ansys.com〉.