Synthesis of PMMA/PEG/Si3N4 Nanostructures and Exploring the Structural and Dielectric Characteristics for Flexible Nanoelectronics Applications

Silicon - Tập 15 - Trang 3977-3985 - 2023
Ghaith Ahmed1, Ahmed Hashim1
1Department of Physics, College of Education for Pure Sciences, University of Babylon, Babylon, Iraq

Tóm tắt

This work aims to enhance the dielectric characteristics of poly-methyl methacrylate(PMMA)/polyethylene glycol(PEG)/silicon nitride(Si3N4) nanostructures to be functional in flexible pressure sensors and electronics nanodevices. The PMMA/PEG films and Si3N4 NPs doped PMMA/PEG were fabricated by utilizing casting process. The structure characteristics of PMMA/PEG/Si3N4 nanostructures were investigated and it included: FTIR and optical microscope. The dielectric characteristics were tested by using LCR meter at frequency(f) ranged from 100 Hz to 5 MHz. The structural characteristics results of PMMA/PEG/Si3N4 nanostructures indicated high distribution of Si3N4 NPs in the PMMA/PEG medium and excellent incorporation between Si3N4 NPs and PMMA/PEG matrix. The results of dielectric characteristics demonstrated that rise in the dielectric parameters of PMMA/PEG with an increase in the Si3N4 NPs content. The dielectric constant and AC electrical conductivity of PMMA/PEG increased about 39% and 49% with low values of dielectric loss ranged from 0.14 to 0.275 at 100 Hz, this result makes the PMMA/PEG/Si3N4 nanostructures can be appropriate in various nanoelectronics applications. The parameters of dielectric properties for PMMA/PEG/Si3N4 nanostructures were altered with an increase in the frequency. Finally, the structure and dielectric characteristics indicated to the PMMA/PEG/Si3N4 nanostructures can be utilized in flexible various nanoelectronics applications with few cost, high energy storage and low loss. The pressure sensor application of PMMA/PEG/Si3N4 nanostructures was investigated. The results showed the PMMA/PEG/Si3N4 nanostructures have high sensitivity for pressure with excellent flexibility and high environmental resistance compared of other sensors.

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Silicon

Tập 15

3977-3985

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