Synthesis and Characteristics of SiC/MnO2/PS/PC QuaternaryNanostructures for Advanced Nanodielectrics Fields
Tóm tắt
This work aims to synthesize of silicon carbide(SiC)/manganese oxide(MnO2)/polystyrene(PS)/ polycarbonate(PC) quaternarynanostructures to use in various advanced electronics nanodevices. The structural and dielectric properties of PS/PC/MnO2/SiC nanostructures films were studied. The structural properties included the Fourier transformation-infrared spectroscopy(FTIR), field emission scanning electron microscope(FE-SEM), optical microscope(OM).The results showed that the FE-SEM and optical microscope analysis confirmed that the (MnO2/SiC) NPs have homogeneous distribution into the PS/PC matrix. The dielectric properties of PS/PC/MnO2/SiC nanostructures films were examined at frequency from 100 Hz to 5 × 106 Hz. The real part of dielectric permittivity and dielectric loss were decreased with increasing of frequency while, they were increased with an increase in the content of (MnO2/SiC) NPs. The A.C conductivity of PS/PC/MnO2/SiC nanostructures films increases with increasing of the frequency and content of (MnO2/SiC) NPs. The real part of dielectric permittivity and electrical conductivity of PS/PC blend were enhanced about 32.7% and 46.8% respectively when the MnO2/SiC NPs content reached 5.2wt.%. The final results showed that the nanostructured PS/PC/MnO2/SiC have high real part of dielectric permittivity with low dielectric loss which make it appropriate to utilize in various advanced electronics nanodevices like capacitors, transistors, electronic gates and others nanodevices have lightweight and good corrosion resistance.
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