Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Microelectronics Journal - Tập 26 - Trang 255-259 - 1995
M. Mouis1, H.J. Gregory2, S. Denorme1, D. Mathiot1, P. Ashburn2, D.J. Robbins3, J.L. Glasper3
1France Telecom, CNET-Grenoble, BP 98, 38243 Meylan cedex, France. Tel: +33 76 76 41 38. Fax: +33 76 90 34 43
2Department of Electronics and Computer Science, University of Southampton, Southampton SO9 5NH, UK. Tel: +44(0) 703 59 28 86. Fax: +44(0) 703 59 30 29
3Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK. Tel: +44(0) 684 89 50 17. Fax: +44(0) 684 89 43 11

Tài liệu tham khảo

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Thông tin xuất bản

Microelectronics Journal

Tập 26

255-259

Thông tin tác giả