Overview of GaAs und CdTe Pixel Detectors Using Medipix Electronics

Crystal Research and Technology - Tập 55 Số 9 - 2020
M. Fiederle1,2, S. Procz3, Elias Hamann2, A. Fauler3, Christer Fröjdh4
1Karlsruher Institute for Technology Institute for Photon Science and Synchrotron Radiation (IPS) Hermann‐von‐Helmholtz‐Platz 1 Eggenstein‐Leopoldshafen D‐76344 Germany
2Karlsruher Institute for Technology Institute for Photon Science and Synchrotron Radiation (IPS) Hermann-von-Helmholtz-Platz 1 Eggenstein-Leopoldshafen D-76344 Germany
3Albert‐Ludwigs‐Universität Freiburg Freiburger Materialforschungszentrum (FMF) Stefan‐Meier‐Straße 21 Freiburg D‐79104 Germany
4Department of Electronics Design (EKS) Midsweden University Holmgatan 10 Sundsvall SE-851 70 Sweden

Tóm tắt

AbstractGaAs and CdTe pixel detectors have been developed over the last few decades. The applications of these detectors include X‐ and gamma‐ray detectors working at room temperature. Fundamental properties such as detection efficiency and noise are determined by the material properties of the sensor material. Different materials have been evaluated over the years in search of the best choice for different types of radiation. This article describes the properties of GaAs and CdTe materials for single photon processing pixel detectors using the Medipix electronics.

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Crystal Research and Technology

Tập 55 Số 9

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