Laser deposition of biaxially textured yttria-stabilized zirconia buffer layers on polycrystalline metallic alloys for high critical current Y-Ba-Cu-O thin films

Applied Physics Letters - Tập 61 Số 18 - Trang 2231-2233 - 1992
R. P. Reade1, Paul Berdahl1, Richard E. Russo1, S. M. Garrison2
1Lawrence Berkeley Laboratory, Energy and Environment Division, Berkeley, California 94720
2Conductus, Inc., Sunnyvale, California 94086

Tóm tắt

Pulsed laser deposition of yttria-stabilized zirconia (YSZ) layers on polycrystalline metallic alloy substrates is used to produce an intermediate layer for YBa2Cu3O7−δ (YBCO) thin-film growth. The desired (001) YSZ texture is obtained at 1.0 mTorr oxygen pressure and 70 °C. Significant improvement in (001) texturing is demonstrated by using an ion beam to assist growth. Argon-ion-assisted growth produces layers with alignment of the in-plane crystal axes in addition to the (001)-normal texture. Highly c-axis-oriented biaxially aligned YBCO thin films can be deposited on these layers, with Tc(R=0)=92 K and Jc (77 K, B=0 T)=6×105 A/cm2 and Jc (77 K, 0.4 T)=8×104 A/cm2. With further improvement of the YSZ texture, the YBCO current-carrying capacity of films on polycrystalline metallic alloys may approach that of films on single-crystal substrates.

Từ khóa


Tài liệu tham khảo

1990, J. Appl. Phys., 68, 1354, 10.1063/1.346681

1991, Appl. Phys. Lett., 58, 1202, 10.1063/1.104364

1991, Appl. Phys. Lett., 59, 739, 10.1063/1.105329

1990, Appl. Phys. Lett., 57, 2594, 10.1063/1.103825

1990, Appl. Phys. Lett., 57, 1161, 10.1063/1.104225

1990, Appl. Phys. Lett., 57, 304, 10.1063/1.104218

1990, Appl. Phys. Lett., 57, 1578, 10.1063/1.103358

1992, Appl. Phys. Lett., 60, 769, 10.1063/1.106514

1986, J. Appl. Phys., 60, 4160, 10.1063/1.337499

1990, Phys. Rev. B, 41, 4038

1990, Appl. Phys. Lett., 57, 1164, 10.1063/1.104226

1991, Appl. Phys. Lett., 58, 2168, 10.1063/1.104995

1992, Physica C, 195, 93, 10.1016/0921-4534(92)90079-R

Thông tin
Thông tin xuất bản

Applied Physics Letters

Tập 61 Số 18

2231-2233

Thông tin tác giả