Hạn chế không gian giao diện từ laser cho phép sự phát triển phẳng của 2D SnS2 trên Graphene nhằm kết nối electron/ion lưu lượng cao trong lưu trữ natri

Nano-Micro Letters - Tập 14 - Trang 1-16 - 2022
Xiaosa Xu1, Fei Xu1, Xiuhai Zhang1, Changzhen Qu1, Jinbo Zhang1, Yuqian Qiu1, Rong Zhuang1, Hongqiang Wang1
1State Key Laboratory of Solidification Processing, Centre for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Shaanxi Joint Laboratory of Graphene (NPU), Xi’an, People’s Republic of China

Tóm tắt

Việc thiết lập các giao diện dị thể liên kết cộng hóa trị với tiếp xúc trực tiếp có triển vọng cho việc lưu trữ năng lượng tiên tiến, trong khi thách thức vẫn tồn tại về cách ức chế sự phát triển dị hướng của các tinh thể được nucle hóa trên ma trận. Tại đây, cầu nối cộng hóa trị tiếp xúc trực tiếp giữa cấu trúc dị hợp 2D-nanosheets/graphene được xây dựng bằng cách cố ý liên kết trước các hạt nano vô định hình và không ổn định được sản xuất bằng laser trên graphene, trong đó các hạt nano vô định hình được thiết kế thông qua quá trình oxy hóa cạnh tranh của các liên kết Sn-O và Sn-S, và đặc điểm không ổn định được sử dụng để tạo thuận lợi cho việc hình thành liên kết cộng hóa trị C-S-Sn ở giữa cấu trúc dị hợp. Cầu nối tiếp xúc trực tiếp của các tấm SnS2 siêu mỏng trên graphene cho phép cấu trúc dị hợp có diện tích kết nối cộng hóa trị lớn và độ tải cao, do đó tạo ra các kênh truyền electron/ion không bị cản trở và cấu trúc điện cực không thể phá hủy, cùng với khả năng chu kỳ và khả năng tỷ lệ ấn tượng cho pin natri-ion, xếp hạng trong số những loại tốt nhất trong hồ sơ các điện cực dựa trên SnS2. Công trình hiện tại do đó cung cấp một lựa chọn cho việc xây dựng các cấu trúc dị hợp với các bề mặt phẳng cho việc lưu trữ năng lượng điện hóa và thậm chí xa hơn.

Từ khóa

#cộng hóa trị dị hợp #SnS2 #graphene #lưu trữ năng lượng điện hóa #pin natri-ion

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