High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

Applied Physics Letters - Tập 91 Số 2 - 2007
John F. Geisz1, Sarah Kurtz1, M. W. Wanlass1, Jas S. Ward1, A. Duda1, Daniel J. Friedman1, J. M. Olson1, William E. McMahon1, T. Moriarty1, J. Kiehl1
1National Renewable Energy Laboratory, Golden, Colorado 80401

Tóm tắt

The authors demonstrate a thin, Ge-free III–V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1sun global spectrum, space spectrum, and concentrated direct spectrum at 81suns, respectively. The device consists of 1.8eV Ga0.5In0.5P, 1.4eV GaAs, and 1.0eV In0.3Ga0.7As p-n junctions grown monolithically in an inverted configuration on GaAs substrates by organometallic vapor phase epitaxy. The lattice-mismatched In0.3Ga0.7As junction was grown last on a graded GaxIn1−xP buffer. The substrate was removed after the structure was mounted to a structural “handle.” The current-matched, series-connected junctions produced a total open-circuit voltage over 2.95V at 1sun.

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Applied Physics Letters

Tập 91 Số 2

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