A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs

Microelectronics Journal - Tập 42 - Trang 1391-1395 - 2011
F. Djeffal1,2, T. Bendib2, M.A. Abdi1
1LEPCM, University of Batna, Batna 05000, Algeria
2LEA, Department of Electronics, University of Batna, Batna 05000, Algeria

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