SAT-based Silicon Debug of Electrical Errors under Restricted Observability EnhancementSpringer Science and Business Media LLC - Tập 35 - Trang 655-678 - 2019
Binod Kumar, Masahiro Fujita, Virendra Singh
Silicon debugging of integrated circuits is exacerbated by the lack of golden responses, highly restricted observability and irreproducible nature of bugs. Debug engineers need to develop better methods that can assist in error localization at lower level(netlist) granularity. It is widely accepted that root-cause analysis of electrical bugs is highly difficult which further elongates the time nee...... hiện toàn bộ
Applying Artificial Neural Networks to Logic Built-in Self-test: Improving Test Point InsertionSpringer Science and Business Media LLC - Tập 38 - Trang 339-352 - 2022
Yang Sun, Spencer K. Millican
This study applies artificial neural networks (ANNs) to increase stuck-at and delay fault coverage of logic built-in self-test (LBIST) through test point insertion (TPI). Increasing TPI quality is essential for modern logic circuits, but the computational requirements of current TPI heuristics scale unfavorably against increasing circuit complexity, and heuristics that evaluate a TPs quality can m...... hiện toàn bộ
A New Approach to Single Event Effect Tolerance Based on Asynchronous Circuit TechniqueSpringer Science and Business Media LLC - Tập 24 - Trang 57-65 - 2008
Rui Gong, Wei Chen, Fang Liu, Kui Dai, Zhiying Wang
Some asynchronous circuit techniques are proposed to provide a new approach to Single Event Effect (SEE) tolerance in synchronous circuits. Two structures, Double Modular Redundancy (DMR) and Temporal Spatial Triple Modular Redundancy with Dual Clock Triggered Register (TSTMR-D), are presented. Three SEE tolerant 8051 cores with DMR, TSTMR-D and traditional Triple Modular Redundancy (TMR) are impl...... hiện toàn bộ
Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive DefectsSpringer Science and Business Media LLC - Tập 35 - Trang 191-200 - 2019
G. Cardoso Medeiros, E. Brum, L. Bolzani Poehls, T. Copetti, T. Balen
In recent years, FinFET-based Static Random Access Memories (SRAMs) have become a viable solution to provide the storage of big data volume in Systems-on-Chip (SoCs) as well as to assure high performance deep-scaled devices. As consequence, FinFET-based SRAMs are an extremely viable solution to guarantee the high-performance requirements of deep-scaled devices. However, FinFET-based SRAMs can also...... hiện toàn bộ
An Efficient Metric-Guided Gate Sizing Methodology for Guardband Reduction Under Process Variations and Aging EffectsSpringer Science and Business Media LLC - Tập 35 - Trang 87-100 - 2019
Andres Gomez, Victor Champac
Circuit reliability due to Bias Temperature Instability, BTI, has become an important concern in scaled-down complex electronic systems. Even more, current silicon technologies are severely affected by the combined impact of BTI-induced device’s aging and Process-induced device’s parameters variations. The conventional worst-case guardbanding to deal with reliable circuit operation is not longer a...... hiện toàn bộ