Pleiades Publishing Ltd

A novel SOI MOSFET structure is presented that is designed to be operated at 4–600 K and is expected to provide an improvement in performance and reliability. It essentially employs high doping of peripheral source/drain regions and longitudinally periodic doping of the gates and channel.

A series of aspects on the development of apparatus tools from modern multichannel intellectual power packs (MIPPs) is considered. A new microcircuit for the protection of the power pack against the over-load with respect to the current and temperature is developed.

A computer simulation is presented of the carrier transport in a diffusion-doped dual-collector lateral bipolar magnetotransistor fabricated from a p-well in an n-substrate, with the substrate and the well interconnected externally. The mechanism by which the negative relative sensitivity of collector current arises is addressed. Carrier transport under low-level injection is analyzed. It is concluded that negative relative sensitivity results from the magnetic-field-induced redistribution of electrons and holes that recombine in the base. This model of negative relative sensitivity might be called the bulk recombination mechanism.

This work is devoted to the atomistic simulation of chemical vapor deposition (CVD) of thin silicon nitride films from the mixture of dichlorosilane (DCS) and ammonia in CVD reactors. The earlier developed chemical mechanism is substantially extended by including the reactions of catalytic decomposition of DCS, and a self-consistent atomistic model of a CVD process is developed. An extended chemical mechanism is constructed and analyzed that allows one to adequately describe kinetic processes in a gas phase within the ranges of temperature, pressure, and the DCS: NH3 ratio of original reactants, that are characteristic of silicon nitride deposition. An effective kinetic model is developed that involves the calculation of the rate constants and the concentrations of the gas mixture components. A thermodynamic analysis of the surface coverage by various chemisorbed groups is carried out, and equilibrium surface concentrations are obtained for the main chemisorbed groups. Practically significant conclusions are made about the character of the deposition process and, in particular, about the role of the extended chemical mechanism.

The extraction of Schmidt modes for continuous-variable systems is considered. An algorithm based on the singular-value decomposition of a matrix is proposed. It is applied to the entanglement in (i) an atom—photon system with spontaneous emission and (ii) a system of biphotons with spontaneous parametric downconversion (SPDC) of type II. For the atom—photon system, the evolution of entangled states is found to be governed by a parameter approximately equal to the fine-structure constant times the atom-to-electron mass ratio. An analysis is made of the dynamics of atom—photon entanglement on the assumption that the system’s evolution is determined by the superposition of an initial and a final state. It is shown that in the course of emission the entanglement entropy first rises on a timescale of order the excited-state lifetime and then falls, approaching asymptotically a residual level due to the initial energy spread of the atomic packet (momentum spread squared). SPDC of type II is analyzed by means of the polarization density matrix and a newly introduced coherence parameter for two spatially separated modes. The loss of intermodal coherence is addressed that results from the difference in behavior between ordinary-and extraordinary-ray photons in a nonlinear crystal. The degree of intermodal coherence is investigated as a function of the product of crystal length and pump bandwidth.

Results of the review of numerous investigations in the field of modern nanooptics, which show that there are various penetration mechanisms of laser radiation energy inside subwave apertures, are presented. They also show that the methods of laser imitation simulation of bulk ionization effects can be used up to nanometer levels of microcircuit technology with the obligatory dosimetry calibration.

A brief overview of the current state of the experimental research on the development of the element base of quantum computers with qubits based on single neutral atoms trapped in optical traps. The requirements for qubits, peculiarities of single neutral atoms as qubits, methods for the quantum register development and for the implementation of single-qubit quantum logic operations in the laser and microwave fields, and two-qubit operations through the dipole–dipole interaction after a short laser excitation of atoms to the Rydberg states are discussed. The results of the experiments on the observation of the interaction of two Rydberg atoms at a Förster resonance controlled by the dc and radio-frequency electric field are presented.

The results of investigation of the polarization relaxation mechanism for the LiPON solid electrolyte by a discharge through an external load are presented. Test cells implemented in the form of encapsulated multilayer structures $${{{{{{\text{Si}{{\text{O}}_{\text{2}}}}/{\text{Pt}}(100\,\,\text{nm})}/{\text{LiPON}\,(1000\,\,\text{nm})}}/{\text{Pt}~(100\,\,\text{nm})}}/{\text{Ti}~(10\,\,\text{nm})}}/{\text{Si}{{\text{O}}_{\text{2}}}}}/{\text{Si}}\;$$ and previously studied by the standard techniques are tested on a special bench measuring discharge characteristics. The core of the method lies in charging the test cell from a stable voltage source up to saturation with the subsequent rapid switch to precision resistance and detection of the voltage drop. The measurements are taken in the load range from 0.1 MΩ to 10 Ω in the temperature range of –50 to 25°C. An equivalent electric circuit for the test cell is proposed, for which a mathematical model of the discharge process is constructed. In the context of the proposed model, the features of the experimental curves are explained by the processes of redox reactions of the lithium ions at the surface of the electrodes and generation of nonequilibrium charge carriers in the bulk upon the charging and discharging of the test cell.

A theoretical investigation of the IMPATT diode supply current on the operation mode of a generator is out. As additional parameters affecting the operation mode, the coefficients of signal reflection from the inhomogeneity in the output transmission line and the delay time of this signal have been analyzed. It is shown that the following modes of synchronization may appear at various relations between these parameters: with an instability of the amplitude, multifrequency mode, dynamic chaos mode, single-frequency mode, and oscillation suppression mode. Based on the solution to the autogenerator equation, the possible operation modes of a generator based on the IMPATT diode were analyzed. The results make it possible to assess the range of parameters where a negative effect upon the operation mode of the oscillator will be absent and the ranges of the oscillator’s parameters when the mode of dynamic chaos can be obtained.