Research on Testing Methods of SINAD Analog-to-Information ConvertersPleiades Publishing Ltd - Tập 52 - Trang 608-613 - 2024
M. N. Polunin, V. V. Losev, Yu. A. Chaplygin
The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion ...... hiện toàn bộ
Magnetic Properties of Ni Nanowires in Porous Anodic Alumina MatrixPleiades Publishing Ltd - - 2024
E. A. Grushevski, N. G. Savinski, O. S. Trushin, L. A. Shendrikova
This paper focuses on the investigation of magnetic properties of Ni nanowire arrays synthesized using Al2O3 porous template. Porous alumina samples were obtained by double electrochemical anodizing of the prepared foil in 0.5 M oxalic acid, at a voltage of 60 V and a temperature of 25°C and examined by scanning electron microscopy. The pore diameter distribution maximums is about 85 nm. Nanowires...... hiện toàn bộ
Electrolyte hydrodynamics in anodic alumina poresPleiades Publishing Ltd - Tập 43 - Trang 358-360 - 2014
V. A. Sokol, V. A. Yakovtseva
The electrolyte movement mechanism in the pores of porous anodic alumina under the electric field action during the oxide formation is discussed. A qualitative model for the electrolyte exchange in the growing pore of porous anodic alumina, taking into account the electric field direction and diffuse layer charge, is presented. Since the anodic alumina surface is charged negatively and the electro...... hiện toàn bộ
A model and properties of a thermodynamically reversible logic gatePleiades Publishing Ltd - Tập 29 - Trang 77-90 - 2000
K. A. Valiev, V. I. Starosel’skii
Requirements for a completely reversible (in thermodynamic terms) binary logic gate in which the computing energy returns to the system and is used in subsequent computations are put forward. A set of elements of the reversible gate is considered, and conditions necessary for its operation are formulated. A mechanical and an electronic design of the completely reversible gate, as well as the confi...... hiện toàn bộ
Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative SensitivityPleiades Publishing Ltd - Tập 32 - Trang 385-390 - 2003
A. V. Kozlov, M. A. Reveleva, R. D. Tikhonov
A computer simulation is presented of the carrier transport in a diffusion-doped dual-collector lateral bipolar magnetotransistor fabricated from a p-well in an n-substrate, with the substrate and the well interconnected externally. The mechanism by which the negative relative sensitivity of collector current arises is addressed. Carrier transport under low-level injection is analyzed. It is concl...... hiện toàn bộ
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier LayerPleiades Publishing Ltd - Tập 47 - Trang 137-141 - 2018
A. N. Aleshin, N. V. Zenchenko, D. S. Ponomarev, O. A. Ruban
This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us to correctly determine the operating frequency of the transistor, taking into account the effect of charged dislocation lines in the barrier layer of the heterostructure. The operating freque...... hiện toàn bộ
Porous-Silicon Formation in HF–HNO3–H2O EtchantsPleiades Publishing Ltd - Tập 31 - Trang 88-96 - 2002
E. A. Starostina, V. V. Starkov, A. F. Vyatkin
The chemical formation of porous silicon in HF–HNO3–H2O etchants is studied experimentally. A technique is devised to determine the ranges in which the proportions of the acids should be varied in order to change from etch polishing to pore formation. The structure and properties of porous layers are examined in relation to the proportion of etchant ingredients.
Response Mechanism of the Base-in-Well Bipolar MagnetotransistorPleiades Publishing Ltd - Tập 34 - Trang 160-172 - 2005
R. D. Tikhonov
For the base-in-well bipolar magnetotransistor, a computer simulation is conducted in conjunction with an experiment. The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field. (ii) The device shows threshold behavior. (iii) The relative magnetic-field sensitivity of collector current is dependent on the applied magnetic flux dens...... hiện toàn bộ