Pleiades Publishing Ltd
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New CMOS circuit implementation of a one-bit full-adder cell
Pleiades Publishing Ltd - Tập 40 - Trang 119-127 - 2011
A new mirror CMOS circuit implementation of a one-bit full-adder cell is
proposed. Using CMOS technology provides zero static power consumption and the
freedom from fractional voltage levels at the internal nodes (no voltage
recovery is needed). The solution proposed is shown to be superior in carry
speed to any alternative CMOS implementation reported so far, and should
therefore be suitable for ...
Achieving sub-1.6-nm resolutions of a low-voltage microscopic focused-ion-beam system not involving aberration correction
Pleiades Publishing Ltd - Tập 37 - Trang 98-106 - 2011
The final, second, part is presented of an investigation into possible methods
of achieving the ultimate resolution for focused-ion-beam (FIB) microscopes. Our
strategy differs from the well-known FIB technologies in the following respects:
(i) It employs an advanced ion source of effective radius ≈1 nm. (ii) The ion
energy at the target is as low as −300 eV. (iii) Potential secondary emission of
...
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications
Pleiades Publishing Ltd - - 2019
Research on Testing Methods of SINAD Analog-to-Information Converters
Pleiades Publishing Ltd - Tập 52 - Trang 608-613 - 2024
The operation of an analog-to-information converter (AIC) is based on the theory
of compressed sampling, which allows us to process a signal with a small number
of reports, provided that the input signal is compressible. As a result, the
collected data may not have all the information about the spectrum of the input
signal, and the standard method for estimating the signal-to-noise and
distortion ...
Anisotropic Etching of SiO2 in High-Voltage Gas-Discharge Plasmas
Pleiades Publishing Ltd - Tập 33 - Trang 169-182 - 2004
An experiment is reported on anisotropic etching in a CF4–O2plasma produced by
high-voltage gas discharge. The process is applied to SiO2and is also effected
on SiC, Si, C (diamond), and As2S3. It is shown that the etch rate is mainly
dependent on the oxygen percentage, plasma parameters, and the wafer
temperature. It is established that etch rate is maximal at oxygen percentages
of 0.8–1.5%, disc...
Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon
Pleiades Publishing Ltd - Tập 51 - Trang 243-246 - 2022
An experimental study is conducted of the influence of the etching time and
external parameters of the discharge (bias potential, input power, gas pressure)
on the etching rate of silicon in a CF4/Ar mixture. It is shown that the silicon
etching process proceeds in the stationary mode. It is found that when a bias
potential (–100 or –160 V) is applied to the substrate holder, the silicon
etching r...
The use of stressed silicon in MOS transistors and CMOS structures
Pleiades Publishing Ltd - Tập 38 Số 2 - Trang 71-86 - 2009
Electrodes based on the silicon-carbon nanotube composite for increased-capacity lithium batteries
Pleiades Publishing Ltd - Tập 43 - Trang 483-486 - 2014
The possibility of creating increased-capacity thin-film lithium batteries using
nanostructured composites is studied. It is shown that the developed structure
formation method is distinguished for the technological effectiveness and the
obtained composite for the increased capacity and improved cycling as compared
to the bulk silicon.
Magnetic Properties of Ni Nanowires in Porous Anodic Alumina Matrix
Pleiades Publishing Ltd - - 2024
This paper focuses on the investigation of magnetic properties of Ni nanowire
arrays synthesized using Al2O3 porous template. Porous alumina samples were
obtained by double electrochemical anodizing of the prepared foil in 0.5 M
oxalic acid, at a voltage of 60 V and a temperature of 25°C and examined by
scanning electron microscopy. The pore diameter distribution maximums is about
85 nm. Nanowires...
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