New CMOS circuit implementation of a one-bit full-adder cellPleiades Publishing Ltd - Tập 40 - Trang 119-127 - 2011
V. V. Shubin
A new mirror CMOS circuit implementation of a one-bit full-adder cell is proposed. Using CMOS technology provides zero static power consumption and the freedom from fractional voltage levels at the internal nodes (no voltage recovery is needed). The solution proposed is shown to be superior in carry speed to any alternative CMOS implementation reported so far, and should therefore be suitable for ...... hiện toàn bộ
Achieving sub-1.6-nm resolutions of a low-voltage microscopic focused-ion-beam system not involving aberration correctionPleiades Publishing Ltd - Tập 37 - Trang 98-106 - 2011
V. A. Zhukov
The final, second, part is presented of an investigation into possible methods of achieving the ultimate resolution for focused-ion-beam (FIB) microscopes. Our strategy differs from the well-known FIB technologies in the following respects: (i) It employs an advanced ion source of effective radius ≈1 nm. (ii) The ion energy at the target is as low as −300 eV. (iii) Potential secondary emission of ...... hiện toàn bộ
Research on Testing Methods of SINAD Analog-to-Information ConvertersPleiades Publishing Ltd - Tập 52 - Trang 608-613 - 2024
M. N. Polunin, V. V. Losev, Yu. A. Chaplygin
The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion ...... hiện toàn bộ
Anisotropic Etching of SiO2 in High-Voltage Gas-Discharge PlasmasPleiades Publishing Ltd - Tập 33 - Trang 169-182 - 2004
N. L. Kazanskii, V. A. Kolpakov, A. I. Kolpakov
An experiment is reported on anisotropic etching in a CF4–O2plasma produced by high-voltage gas discharge. The process is applied to SiO2and is also effected on SiC, Si, C (diamond), and As2S3. It is shown that the etch rate is mainly dependent on the oxygen percentage, plasma parameters, and the wafer temperature. It is established that etch rate is maximal at oxygen percentages of 0.8–1.5%, disc...... hiện toàn bộ
Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with ArgonPleiades Publishing Ltd - Tập 51 - Trang 243-246 - 2022
D. B. Murin, S. A. Pivovarenok, A. S. Kozin
An experimental study is conducted of the influence of the etching time and external parameters of the discharge (bias potential, input power, gas pressure) on the etching rate of silicon in a CF4/Ar mixture. It is shown that the silicon etching process proceeds in the stationary mode. It is found that when a bias potential (–100 or –160 V) is applied to the substrate holder, the silicon etching r...... hiện toàn bộ
Electrodes based on the silicon-carbon nanotube composite for increased-capacity lithium batteriesPleiades Publishing Ltd - Tập 43 - Trang 483-486 - 2014
V. A. Galperin, E. P. Kitsyuk, A. M. Skundin, E. K. Tuseeva, T. L. Kulova, Yu. P. Shaman, S. N. Skorik
The possibility of creating increased-capacity thin-film lithium batteries using nanostructured composites is studied. It is shown that the developed structure formation method is distinguished for the technological effectiveness and the obtained composite for the increased capacity and improved cycling as compared to the bulk silicon.
Magnetic Properties of Ni Nanowires in Porous Anodic Alumina MatrixPleiades Publishing Ltd - - 2024
E. A. Grushevski, N. G. Savinski, O. S. Trushin, L. A. Shendrikova
This paper focuses on the investigation of magnetic properties of Ni nanowire arrays synthesized using Al2O3 porous template. Porous alumina samples were obtained by double electrochemical anodizing of the prepared foil in 0.5 M oxalic acid, at a voltage of 60 V and a temperature of 25°C and examined by scanning electron microscopy. The pore diameter distribution maximums is about 85 nm. Nanowires...... hiện toàn bộ