Journal Physics D: Applied Physics

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High-field ZnO-based varistors
Journal Physics D: Applied Physics - Tập 28 Số 4 - Trang 774
A Bui, H T Nguyen, A Loubiere
Stoichiometry enhanced exciton–phonon interactions in ZnO epilayers
Journal Physics D: Applied Physics - Tập 41 Số 19 - Trang 195415 - 2008
Almamun Ashrafi
Optimizing Ga-profiles for highly efficient Cu(In, Ga)Se2thin film solar cells in simple and complex defect models
Journal Physics D: Applied Physics - Tập 47 Số 48 - Trang 485104 - 2014
Christopher Frisk, Charlotte Platzer‐Björkman, Jörgen Olsson, Piotr Szaniawski, Jörn Timo Wätjen, Viktor Fjällström, P.M.P. Salomé, Marika Edoff
An experimental and first-principles study on band alignments at interfaces of Cu2ZnSnS4/CdS/ZnO heterojunctions
Journal Physics D: Applied Physics - Tập 47 Số 7 - Trang 075304 - 2014
Zi-Yuan Dong, Yongfeng Li, Bin Yao, Zhanhui Ding, Gang Yang, Rui Deng, Xuan Fang, Zhipeng Wei, Lei Liu
The investigation of magnetic domain structures in thin foils by electron microscopy
Journal Physics D: Applied Physics - Tập 17 Số 4 - Trang 623-647 - 1984
J. N. Chapman
Magnetic properties of nanocomposite and materials with an excess of Fe
Journal Physics D: Applied Physics - Tập 29 Số 9 - Trang 2284-2289 - 1996
M. Jurczyk, S.J. Collocott, John B. Dunlop, P.B. Gwan
Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation
Journal Physics D: Applied Physics - Tập 43 Số 37 - Trang 374009 - 2010
Christian Riedl, Camilla Coletti, Ulrich Starke
Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This paper reviews the controlled growth of e...... hiện toàn bộ
Resonant Raman scattering and photoluminescence from high-quality nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
Journal Physics D: Applied Physics - Tập 34 Số 24 - Trang 3430-3433 - 2001
X T Zhang, Yichun Liu, Z.Z. Zhi, J Y Zhang, Y. M. Lu, D. Z. Shen, Wenbin Xu, G. Z. Zhong, Xiuwei Fan, Xiangting Kong
Formation and large cryogenic magnetocaloric effect of HoAl2/Al2O3nanocapsules
Journal Physics D: Applied Physics - Tập 42 Số 4 - Trang 045008 - 2009
X G Liu, Bing Li, Dongling Geng, Chunxiang Shi, Fang Yang, Daoan Kang, Z D Zhang
Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation
Journal Physics D: Applied Physics - Tập 49 Số 7 - Trang 075502 - 2016
Patrick Hofmann, Christian Röder, Frank Habel, G. Leibiger, Franziska C. Beyer, Günter Gärtner, Stefan Eichler, Thomas Mikolajick
Tổng số: 389   
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