Interface Science
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Theory of grain boundary motion during high-temperature DIGM
Interface Science - Tập 1 - Trang 133-137 - 1993
A theory of diffusion induced grain boundary migration (DIGM) is presented for
high temperatures where volume diffusion of solute atoms out of the grain
boundary is important. It is shown that due to the presence of a gradient term
in the expression for the free energy of solid solution, even a relatively small
discontinuity in the solute distribution across the gain boundary provides
enough drivi...
Interface Separation in Residually-Stressed Thin-Film Structures
Interface Science - Tập 11 - Trang 309-317 - 2003
Plasticity is a significant contributor to the interfacial fracture resistance
of multilayer thin-film structures containing ductile layers. Salient parameters
affecting plasticity contributions to interfacial fracture energy including the
ductile layer thickness, yield strength, and the maximum cohesive stress
governing interface separation, have been reported. However, the effects of
residual st...
The Effect of Triple Junctions on Grain Boundary Motion and Grain Microstructure Evolution
Interface Science - Tập 7 - Trang 273-283 - 1999
The theory of steady state motion of grain boundary sytems with triple junctions
and the main features of such systems are considered. A special technique of
in-situ observations and recording of triple junction motion is introduced, and
the results of experimental measurements on Zn tricrystals are discussed. It is
shown, in particular, that the described method makes it possible to measure the
t...
An extended structural ledge description of heterophase interfaces
Interface Science - Tập 4 - Trang 191-203 - 1997
A two-dimensional atomic scale geometric description of general heterophase
interfaces is presented on the basis of an extension of the structural ledge
theory and of the near coincidence lattice concept. From the orientation
relationship and the lattice parameters of the two crystals forming the
interface, two different types of ledges and their related terrace can be
derived. Then, these two led...
Wetting and Phase Separation in Polymer Blend Films: Identification of Four Thickness Regimes with Distinct Morphological Pathways
Interface Science - Tập 11 - Trang 237-248 - 2003
Using forward recoil spectrometry and atomic force microscopy, the phase
evolution of a critical blend thin film of deuterated poly(methyl methacrylate)
(dPMMA) and poly(styrene-ran-acrylonitrile) (SAN) is found to depend on film
thickness. Four regimes are identified as film thickness l 0 decreases from
semi-infinite to below the radius of gyration, R g. In the semi-infinite limit
or regime IV (l...
Effect of T-Stress on Crack Growth Along an Interface Between Ductile and Elastic Solids
Interface Science - Tập 11 - Trang 303-308 - 2003
For crack growth along an interface joining an elastic-plastic solid to an
elastic substrate the effect of a non-singular stress component in the crack
growth direction in the elastic-plastic solid is investigated. Conditions of
small scale yielding are assumed, and due to the mismatch of elastic properties
across the interface the corresponding oscillating stress singularity fields are
applied as...
Interfacial free energies and solute diffusivities from data on Ostwald ripening
Interface Science - Tập 3 - Trang 119-125
Using recent theoretical modifications of the kinetic constants characterizing
Ostwald ripening, it is demonstrated that accurate values of the interfacial
free energy, λ, and solute diffusivities, D, can be obtained from experimental
data when the kinetics of particle growth are measured in conjunction with
independent measurements of either the decrease of the matrix supersaturation or
the incre...
Singular and Non-Singular Character of Grain Boundary Structures
Interface Science - Tập 5 - Trang 17-25 - 1997
Five different structures of the Σ1150.48° $$[\overline 1 01]$$ {131} grain
boundary in the bcc lattice, obtained by computer simulation, are analysed on
the basis of their symmetry. It is demonstrated that the singular character of a
grain boundary is not determined by the macroscopic geometrical degrees of
freedom, but is associated with a particular grain boundary structure. This may
have impor...
Electronic Structure of a Bi-Doped Σ = 13 Tilt Grain Boundary in ZnO
Interface Science - Tập 9 - Trang 143-148 - 2001
We have investigated Bi doping in the bulk and in a Σ = 13 tilt grain boundary
in ZnO using ab-initio DFT-calculations. We obtain a negative segregation energy
suggesting that bismuth accumulates in the grain boundary. The Bi-atom causes
considerable atomic displacements in the grain boundary increasing the local
Bi–O bond length and attracting an O-atom on the opposite side of the structural
unit...
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