Theory of grain boundary motion during high-temperature DIGMInterface Science - Tập 1 - Trang 133-137 - 1993
E. I. Rabkin, L. S. Shvindlerman, W. Gust
A theory of diffusion induced grain boundary migration (DIGM) is presented for high temperatures where volume diffusion of solute atoms out of the grain boundary is important. It is shown that due to the presence of a gradient term in the expression for the free energy of solid solution, even a relatively small discontinuity in the solute distribution across the gain boundary provides enough drivi...... hiện toàn bộ
Interface Separation in Residually-Stressed Thin-Film StructuresInterface Science - Tập 11 - Trang 309-317 - 2003
Sven Strohband, Reinhold H. Dauskardt
Plasticity is a significant contributor to the interfacial fracture resistance of multilayer thin-film structures containing ductile layers. Salient parameters affecting plasticity contributions to interfacial fracture energy including the ductile layer thickness, yield strength, and the maximum cohesive stress governing interface separation, have been reported. However, the effects of residual st...... hiện toàn bộ
The Effect of Triple Junctions on Grain Boundary Motion and Grain Microstructure EvolutionInterface Science - Tập 7 - Trang 273-283 - 1999
Günter Gottstein, Vera Sursaeva, Lasar S. Shvindlerman
The theory of steady state motion of grain boundary sytems with triple junctions and the main features of such systems are considered. A special technique of in-situ observations and recording of triple junction motion is introduced, and the results of experimental measurements on Zn tricrystals are discussed. It is shown, in particular, that the described method makes it possible to measure the t...... hiện toàn bộ
An extended structural ledge description of heterophase interfacesInterface Science - Tập 4 - Trang 191-203 - 1997
Y. Champion, S. Hagège
A two-dimensional atomic scale geometric description of general heterophase interfaces is presented on the basis of an extension of the structural ledge theory and of the near coincidence lattice concept. From the orientation relationship and the lattice parameters of the two crystals forming the interface, two different types of ledges and their related terrace can be derived. Then, these two led...... hiện toàn bộ
EditorialInterface Science - Tập 12 - Trang 349-351 - 2004
Konstantin Kovler
Effect of T-Stress on Crack Growth Along an Interface Between Ductile and Elastic SolidsInterface Science - Tập 11 - Trang 303-308 - 2003
Viggo Tvergaard
For crack growth along an interface joining an elastic-plastic solid to an elastic substrate the effect of a non-singular stress component in the crack growth direction in the elastic-plastic solid is investigated. Conditions of small scale yielding are assumed, and due to the mismatch of elastic properties across the interface the corresponding oscillating stress singularity fields are applied as...... hiện toàn bộ
Interfacial free energies and solute diffusivities from data on Ostwald ripeningInterface Science - Tập 3 - Trang 119-125
Alan J. Ardell
Using recent theoretical modifications of the kinetic constants characterizing Ostwald ripening, it is demonstrated that accurate values of the interfacial free energy, λ, and solute diffusivities, D, can be obtained from experimental data when the kinetics of particle growth are measured in conjunction with independent measurements of either the decrease of the matrix supersaturation or the incre...... hiện toàn bộ
Singular and Non-Singular Character of Grain Boundary StructuresInterface Science - Tập 5 - Trang 17-25 - 1997
V. Paidar, V. Vitek
Five different structures of the Σ1150.48°
$$[\overline 1 01]$$
{131} grain boundary in the bcc lattice, obtained by computer simulation, are analysed on the basis of their symmetry. It is demonstrated that the singular character of a grain boundary is not determined by the macroscopic geometrical degre...... hiện toàn bộ
Electronic Structure of a Bi-Doped Σ = 13 Tilt Grain Boundary in ZnOInterface Science - Tập 9 - Trang 143-148 - 2001
Johan M. Carlsson, Helder S. Domingos, Bo Hellsing, Paul D. Bristowe
We have investigated Bi doping in the bulk and in a Σ = 13 tilt grain boundary in ZnO using ab-initio DFT-calculations. We obtain a negative segregation energy suggesting that bismuth accumulates in the grain boundary. The Bi-atom causes considerable atomic displacements in the grain boundary increasing the local Bi–O bond length and attracting an O-atom on the opposite side of the structural unit...... hiện toàn bộ