Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substrates

We have constructed a scaled-up graphite strip-heater system that permits routine zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si wafers. The recrystallized films are similar in crystal quality to those obtained previously in a smaller system, except that they contain higher densities of small protrusions along the subgrain boundaries. Seeded recrystallization has been accomplished by scribing a stripe opening, that extends through the Si and SiO2 films to the Si wafer.