Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substrates

Applied Physics Letters - Tập 41 Số 2 - Trang 186-188 - 1982
John C. C. Fan1, B-Y. Tsaur1, R. L. Chapman1, M. W. Geis1
1Lincoln Laboratory Massachusetts Institute of Technology Lexington, Massachusetts 02173

Tóm tắt

We have constructed a scaled-up graphite strip-heater system that permits routine zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si wafers. The recrystallized films are similar in crystal quality to those obtained previously in a smaller system, except that they contain higher densities of small protrusions along the subgrain boundaries. Seeded recrystallization has been accomplished by scribing a stripe opening, that extends through the Si and SiO2 films to the Si wafer.

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Tài liệu tham khảo

1981, Appl. Phys. Lett., 38, 365, 10.1063/1.92339

1981, Appl. Phys. Lett., 39, 561, 10.1063/1.92794

1981, IEEE Electron Device Lett., EDL-2, 241

1982, Appl. Phys. Lett., 40, 158, 10.1063/1.93021

1982, Appl. Phys. Lett., 40, 388, 10.1063/1.93112

1982, IEEE Electron Device Lett., EDL-3, 79

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Thông tin xuất bản

Applied Physics Letters

Tập 41 Số 2

186-188

Thông tin tác giả