ZnTe-based materials for fight-emitting-devices
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 61-64
Tóm tắt
High crystal quality n-type ZnTe layers are achieved by molecular beam epitaxy (MBE) using Aluminum as a dopant species. The x-ray diffraction (XRD) measurements indicate lattice contraction due to substitutional incorporation of Al and the narrow fine-width of ZnTe:Al layer (24 arcsecs) shows high structural quality of the ZnTe:Al layers. Hall effect measurement of ZnTe:Al layers exhibits the highest carrier concentration of N/sub d/ = 4 /spl times/ 10/sup 18/ cm/sup -3/. Both n- and p-type ZnMgSeTe quaternaries are prepared by Al- and N-doping, respectively. The relationship between energy gap and carrier concentrations is investigated. To demonstrate device operation, Zn(Cd)Te/ZnMgSeTe light-emitting diode (LED) structure is fabricated and room temperature current injected operation is observed.
Từ khóa
#Molecular beam epitaxial growth #Light emitting diodes #Crystalline materials #Zinc compounds #Aluminum #X-ray diffraction #X-ray scattering #Lattices #Hall effect #TemperatureTài liệu tham khảo
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