Arne Behrends1, Johannes Ledig1, M. Al‐Suleiman1, Silke Peters2, A.-M. Racu2, Waldemar Schmunk2, Helmut Hofer2, S. Kück2, A. Bakin1, A. Waag1
1Institute of Semiconductor Technology, University of Technology Braunschweig, Hans‐Sommer‐Str. 66, 38106 Braunschweig, Germany
2Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany
Tóm tắt
AbstractIn this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single‐photon emission, thus the density of the Zn‐Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single‐photon sources these Zn‐Si pairs have to be incorporated into LEDs, therefore we fabricated GaN‐based nano‐LEDs which show electroluminescence at 430 nm (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
