X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages

Microelectronics Reliability - Tập 41 - Trang 185-191 - 2001
M.N Levin1, V.R Gitlin1, S.G Kadmensky1, S.S Ostrouhov1, V.S Pershenkov2
1Department of Nuclear Physics, Voronezh State University, Voronezh 394693, Russian Federation
2Department of Microelectronics, Moscow Physics Engineering Institute, 31, Kashirskoe Shosse, Moscow 115409, Russian Federation

Tài liệu tham khảo

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