Wireless magnetoresistive microsystem for magnetic field measurements

Pleiades Publishing Ltd - Tập 42 - Trang 363-367 - 2013
V. V. Amelichev1, A. N. Saurov1, V. V. Aravin2, A. A. Reznev3, A. A. Demin4, M. V. Khokhlov4
1Research and Production Complex Technological Center, Moscow, Russia
2Federal State Institution “V/h 35533,”, Moscow, Russia
3Federal State Institution “V/h 68240,”, Moscow, Russia
4Scientific and Research Institute of Technology and Manufacturing Automatics, Moscow, Russia

Tóm tắt

The design and technology of magnetic semiconductor elements of wireless magnetoresistive microsystems for magnetic field measurements are proposed and the results of the investigations of a highly sensitivity magnetoresistive converter with magnetic field concentrators are presented. The characteristics of the developed measuring amplifier for operation with a signal from a low-resistance magnetoresistive bridge with a certain unbalance value are reported. The technology for fabricating magnetic semiconductor ICs based on thin-film magnetoresistive structures is described.

Tài liệu tham khảo

Varadan, V., Vinoi, K., and Jose, K., VCh MEMS i ikh primenenie (Rf MEMSs and Their Application), Moscow: Tekhnosfera, 2004, pp. 24–25. Baranova, E., http://www.telemultimedia.ru/art.phpid=363 http://minsvyaz.ru/ru/doc/index.php?id_4-302 http://www.telemultimedia.ru/art.phpid=164 Amelichev, V.V., Aravin, V.V., Verner, V.D., et al., Trends in application of thin-films magnetoresisitve nanostructures in multichip wireless MEMSs, Materialy IX nauchno-tekhnicheskoi konferentsii Tverdotel’naya elektronika. Slozhnye funktsional’nye bloki REA (Proc. IX Sci. Tech. Conf. Solid-State Electronics, Complex Functional Electronic Units), Zvenigorod, 2010, pp. 152–153. Amelichev, V.V., Galushkov, A.I., Dyagilev, V.V., et al., Microelectronic magnetoresistive technique, Nano- i mikrosistemnaya tekhnika, 2007, vol. 3, pp. 22–26. Amelichev, V.V., Galushkov, A.I., Reznev, A.A., et al., Visualization of introduced inhomogeneities of the Earth’s magnetic field / Nano- i mikrosistemnaya tekhnika, 2007, vol. 3, pp. 11–14. Magnetoresistive sensor, Amelichev, V.V., Galushkov, A.I., Dyagilev, V.V., et al., RF Patent 2312429, 2007. Amelichev, V.V., Galushkov, A.I., Gamarts, I.A., et al., Anisotropic magnetoresistive head gradiometer of magnetic field and current, Trudy Rossiiskoi konferentsii UKI-08 (Proc. Conf. UKI-08), 2008, pp. 693–699. Kasatkin, S.I., Murav’ev, A.M., Amelichev, V.V., and Gamarts, I.A., Magnetoresistive head gradiometer, RF Patent 2403652, 2009. Anderson, J.M. and Pohm, AV., Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements, IEEE Trans. Magn., 2001, vol. 37(4), p. 1989. Kasatkin, S.I. and Murav’ev, A.M., Thin-film magnetoresistive sensors, Elektronnye komponenty, 2003, vol. 3, pp. 1–4. Hayakawa, J., Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions, Appl. Phys. Lett., 2006, vol. 89, p. 232510. Lenz, J. and Edelstein, A.S., Magnetic sensors and their applications, IEEE Sensors J., 2006, vol. 6(3), pp. 631–649. Drljaca, P.M., Vincent, F., Besse, P.-A., and Popovic, R.S., Design of planar magnetic concentrators for high sensitivity Hall devices, Sensors and Actuators A: Phys., 2002, vol. 97, pp. 10–14.