Wideband impedance matched GaInP/GaAs HBT Gilbert micromixer with 12 dB gain

Proceedings. IEEE Asia-Pacific Conference on ASIC, - Trang 323-326
Cheng-Yu Wang1, Shey-shi Lu1, C.C. Meng2
1Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan
2Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan

Tóm tắt

A wideband GaInP/GaAs HBT micromixer with 12 dB conversion gain is demonstrated from DC to 9 GHz. Input P/sub 1dB/ of -4 dBm and IIP/sub 3/ of 2 dBm are also achieved. The supply voltage is 5 V and the total quiescent current of the circuit is 5 mA including the bias circuit. The single-to-differential input stage in Gilbert micromixer renders good frequency response and eliminates the need for common mode rejection.

Từ khóa

#Wideband #Impedance #Gallium arsenide #Heterojunction bipolar transistors #Gain #Circuits #Radio frequency #Mixers #Transconductance #Frequency response

Tài liệu tham khảo

razavi, 1995, RF microelectronics, 186 leonard, 1998, A charge-injection method for Gilbert cell biasing, Electrical and Computer Engineering 1998 IEEE Canadian Conference, 365 durec, 1996, A linear class AB single-ended to differential transconverter suitable for RF circuits, IEEE MTT-S Digest, 1071 anderson, 1997, Social impacts of computing: Codes of Barrie Gilbert, IEEE Journal of Solid State Circuit, 32, 1412
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Proceedings. IEEE Asia-Pacific Conference on ASIC,

323-326

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