Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
Tóm tắt
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/ cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescence band attributed to silicon nanocrystals.
Từ khóa
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulsesTài liệu tham khảo
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