Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 451-454
T. Wosinski1, T. Figielski1, A. Makosa1, W. Dobrowolski1, O. Pelya1, B.F. Usher2, B. Pecz3
1Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
2Department of Electronic Engineering, La Trobe university, Bundoora, VIC, Australia
3Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences (ATOMKI), Budapest, Hungary

Tóm tắt

Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers are temporarily trapped.

Từ khóa

#Magnetic field measurement #Fluctuations #Voltage #Magnetic fields #Physics #Temperature #Atomic layer deposition #Extraterrestrial measurements #Gallium arsenide #Materials science and technology

Tài liệu tham khảo

10.1080/14786440808520491 10.1088/0268-1242/14/12/325 10.1007/978-3-642-71976-9_11 10.1002/1521-3951(200011)222:1<151::AID-PSSB151>3.0.CO;2-D 10.1080/095008398178543
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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

451-454

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