Li Zhang1,2, Yihao Yang3,4,1,2, Mengjia He1,2, Hai‐Xiao Wang5, Zhaoju Yang4, Er‐Ping Li1, Fei Gao1,2, Baile Zhang3,4, Ranjan Singh3,4, Jian‐Hua Jiang5, Hongsheng Chen1,2
1Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science and Electronic Engineering, Zhejiang University Hangzhou 310027 China
2State Key Laboratory of Modern Optical Instrumentation and The Electromagnetics Academy at Zhejiang University Zhejiang University Hangzhou 310027 China
3Centre for Disruptive Photonic Technologies The Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore
4Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
5School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215006 China
Tóm tắt
AbstractValley degrees of freedom, providing a novel way to increase capacity and efficiency of information processing, have become an important instrument for photonics. Experimental studies on photonic topological valley kink states at interfaces between regions with opposite valley‐Chern numbers have attracted much attention; however, they are restricted to zigzag‐type interfaces, largely limiting their applications such as geometry‐dependent topological channel intersections. Here, valley kink states at generic interfaces in subwavelength substrate‐integrated photonic circuitry are experimentally demonstrated and manipulated. The robustness of the kink states is verified by measuring transmissions of the kink states through twisted interfaces and interfaces with disorders. Based on the valley kink states at generic interfaces, several topological channel intersections where photonic transport paths are related to geometries of the intersections are realized. In comparison to those in previous work, these valley photonic crystals have subwavelength thicknesses and excellent self‐consistent electrical shielding, which are perfectly compatible with conventional substrate‐integrated photonic circuitry. This work opens a door to manipulate photonic valley pseudo‐spins in lightweight substrate‐integrated circuitry with robustness and easy access.
