VLSI design of CMOS image-reject LNA for 950-MHz wireless receivers
ICCSC'02. 1st IEEE International Conference on Circuits and Systems for Communications. Proceedings (IEEE Cat. No.02EX605) - Trang 330-333
Tóm tắt
This paper presents the design of a CMOS integrated image reject low noise amplifier (IR-LNA) for application to 950 MHz low power, low voltage wireless receivers. A second-order active band-pass filter using an integrated inductor is incorporated into the LNA core to reject the 1.6 GHz image signal without achieving high Q values. The circuit proves to be suitable for highly integrated CMOS receivers employing wideband IF architecture. The IR-LNA designed in a 0.6 /spl mu/m AMS CMOS technology has a 10 dB power gain, 2.4 dB noise figure, -10 dBm input IP3, and a maximum of 65 dB image rejection. The total power consumption at 1.5 V supply is 10 mW.
Từ khóa
#Very large scale integration #CMOS technology #Low-noise amplifiers #Low voltage #Band pass filters #Active inductors #Wideband #Integrated circuit technology #Gain #Noise figureTài liệu tham khảo
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