VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

10.1103/PhysRevB.35.4404

10.1016/0038-1101(77)90027-2

10.1016/0038-1101(94)90005-1

10.1109/16.701479

blomme, 2002, Insulating barrier

govoreanu, 2001, a figure of merit for flash memory multilayer tunnel dielectrics, Proc SISPAD, 270

10.1109/IEDM.2002.1175894

choi, 2000, a 0.15 <formula><tex>$\mu \hbox{m}$</tex></formula><emph>nand</emph> flash technology with 0.11 <formula><tex>$\mu \hbox{m}^{2}$ </tex></formula> cell size for 1-gb flash memory, Tech Dig Int Electron Devices Meeting, 767

govoreanu, 2002, enhanced tunneling current effect for nonvolatile memory applications, Ext Abstr Solid-State Devices and Materials Conf, 154

10.1063/1.1479747

10.1063/1.122402

10.1103/PhysRev.123.85

10.1063/1.1361065

abramowicz, 1972, Handbook of Mathematical Functions

10.1063/1.365364

2001, International Technology Roadmap for Semiconductors (ITRS)

10.1016/0038-1101(66)90071-2

10.1109/IEDM.2001.979607