Uniaxial locked epitaxy of ZnO on the a face of sapphire

Applied Physics Letters - Tập 77 Số 12 - Trang 1801-1803 - 2000
Paul Fons1,2, K. Iwata1,2, A. Yamada1,2, Koji Matsubara1,2, Shigeru Niki1,2, Ken Nakahara3, Tetsuhiro Tanabe3, H. Takasu3
1Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan 305-8568
2National Institute of Advanced Industrial Science and Techno
3Rohm Corporation, 21 Mizosaki-cho Saiin, Kyoto, Japan 615-8585

Tóm tắt

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]‖[112̄0] and 〈112̄0〉‖[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to >0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire.

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Thông tin xuất bản

Applied Physics Letters

Tập 77 Số 12

1801-1803

Thông tin tác giả