Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

International Journal of Photoenergy - Tập 2012 - Trang 1-5 - 2012
Youngseok Lee1, Woong-Kyo Oh2, Vinh Ai Dao3,2, Shahzada Qamar Hussain1, Junsin Yi1,2
1Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
2School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Suwon, Republic of Korea
3College of Science, Faculty of Material Science, Vietnam National University, 227 Nguyen Van Cu, Hochiminh, Vietnam

Tóm tắt

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get highVocby lowering the leakage current (I0) which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2) layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i) layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2thickness.

Từ khóa


Tài liệu tham khảo

1999, Progress in Photovoltaics, 7, 471, 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7

10.1016/j.solmat.2010.04.030

10.1063/1.2783972

10.1155/2007/97370

10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D

10.1016/S0927-0248(00)00116-1

1993, Solar Energy Materials and Solar Cells, 29, 175, 10.1016/0927-0248(93)90075-E

1994, Progress in Photovoltaics, 2, 265, 10.1002/pip.4670020402

10.1063/1.335562

10.1063/1.1343897

2006, Physical Review Letters, 96, 4

10.1063/1.1861138

1998, Japanese Journal of Applied Physics, 37, 3926

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International Journal of Photoenergy

Tập 2012

1-5

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