Ultralow Electrical Hysteresis along with High Energy‐Storage Density in Lead‐Based Antiferroelectric Ceramics

Advanced Electronic Materials - Tập 6 Số 4 - 2020
Wei Huang1, Guanglong Ge1, Fei Yan1, Bo Shen1, Jiwei Zhai1
1Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials Functional Materials Research Laboratory School of Materials Science and Engineering Tongji University Shanghai 201804 P. R. China

Tóm tắt

AbstractAntiferroelectric ceramics with extraordinary energy‐storage density have gained exponentially soaring attention for their applications in pulsed power capacitors. Nevertheless, high energy dissipation is a deficiency of antiferroelectric materials. The modulation of Ba/La‐doped (Pb0.91BaxLa0.06−2x/3)(Zr0.6Sn0.4)O3 (x = 0.015, 0.03, 0.045, 0.06) antiferroelectric ceramics is aimed at increasing the energy efficiency and obtaining an ideal energy storage density. The traditional solid‐state reaction is exploited for ceramics fabrication and all prepared samples exhibit an ultralow electrical hysteresis due to the local structural heterogeneity, as verified by Raman spectroscopy. Of particular importance is the fact that the (Pb0.91Ba0.045La0.03)(Zr0.6Sn0.4)O3 ceramic possesses an excellent recoverable energy storage density (Wrec = 8.16 J cm−3) and a remarkable energy efficiency (η = 92.1%) simultaneously under an electric field of 340 kV cm−1. Moreover, the corresponding ceramic exhibits a superior discharge current density (CD = 1498.6 A cm−2), a high level of power density (PD = 202.3 MW cm−3), and a nanosecond‐level discharge period (53 ns). This provides a promising antiferroelectric material for fabricating ceramic capacitors with excellent energy storage and high power characteristics.

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Advanced Electronic Materials

Tập 6 Số 4

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