Ultrafast heterobarrier MSM-photodiode structures
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 137-140
Tóm tắt
The impulse response of a heterobarrier metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the use of a heterobarrier structure greatly enhances the response speed of InP/GaInAs MSM-detectors.
Từ khóa
#Charge carrier processes #Fingers #Electrodes #Boundary conditions #Computational modeling #Electron mobility #Diodes #Electrostatics #Poisson equations #Algorithm design and analysisTài liệu tham khảo
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