Ultra-thin epitaxial zirconia oxide on silicon with crystalline interface
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 543-546
Tóm tắt
Epitaxial crystalline yittria-stabilized zirconia (YSZ) films were grown on a silicon wafer by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found atomically sharp and commensurately crystallized without an amorphous layer. X-ray Photoelectron Spectroscopy depth profile and transmission electron microscopy investigation showed there was no silicon dioxide forming at the interface. For the film with electrical equivalent oxide thickness 14.6 /spl Aring/, the leakage current is about 1.1/spl times/10/sup -3/ A/cm/sup 2/ at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/, respectively.
Từ khóa
#Silicon #Crystallization #Semiconductor films #X-ray lasers #Molecular beam epitaxial growth #Contacts #Atomic beams #Atomic layer deposition #Amorphous materials #SpectroscopyTài liệu tham khảo
10.1038/21526
10.1126/science.288.5464.319
10.1088/0953-2048/13/4/305
10.1016/0038-1101(62)90111-9
10.1126/science.285.5436.2079
10.1116/1.591472
10.1557/JMR.1996.0350
hu, 1998, Semiconductor International, 215
10.1063/1.369225
10.1016/S0167-9317(97)00007-5
10.1103/PhysRevLett.81.3014
2000