UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
Tóm tắt
An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.
Tài liệu tham khảo
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Appl. Phys. Lett. 64, 1687–1689 (1994).
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, Appl. Phys. Lett. 67, 1868–1870 (1995).
S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, Y Sugimoto, H Kiyoku, Appl. Phys. Lett. 70, 1417–1419 (1997).
Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode - GaN based Light Emitters and Lasers (Springer-Verlag, Heidelberg, 1997).
F. A. Ponce, MRS Bull. 22, 51–57 (1997).
J Edmond, HS Kong, M Leonard, G Bulman, G Negley, Inst. Phys. Conf. Ser. 142, 991 (1996).
I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, H. Amano, Electron. Lett. 32, 1105–1106 (1996).
G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, H.S. Kong, H.M. Dieringer, J.A. Edmond, J.D. Brown, J.T. Swindell, J.F. Schetzina, Electron. Lett. 33, 1556–1557 (1997).
M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars, MRS Internet J. Nitride Semicond. Res. 2, 41 (1997).
S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, H Kiyoku, Y Sugimoto, T Kozaki, H Umemoto, M Sano, K Chocho, Appl. Phys. Lett. 72, 211–213 (1998).
Dennis K. Wickenden, Zhenchun Huang, D. Brent Mott, Peter K. Shu, Johns Hopkins APL Tech. Dig. 18, 217 (1997).
Wei Yang, Thomas Novova, Subash Krishnankutty, Robert Torreano, Scott McPherson, Holly Marsh, Appl. Phys. Lett. 73, 1086 (1998).
Hadis Morkoc, Nav. Res. Rev. 51, 26 (1999).
T. Huang, D. B. Mott, A. La, Proc. SPIE 3765, 254 (1999).
J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J.F. Schetzina, J.D. Benson, K.W. Dang, C. Terrill, Thomas Nohava, Wei Yang, Subash Krishnankutty, MRS Internet J. Nitride Semicond. Res. 4, 9 (1999).
J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, Thomas Nohava, Wei Yang, Subash Krishnankutty, MRS Internet J. Nitride Semicond. Res. 5S1, W1.9 (2000).