Two major factors determining frequency response of InP avalanche photodiode
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 519-522
Tóm tắt
In this paper, the frequency response limited by avalanche buildup time was calculated using a realistic model which reflects a zinc diffusion profile and includes a nonlocal multiplication theory. The dependency of a chip capacitance on the floating guard rings was also investigated. The trade-off relation between the edge gain suppression and the chip capacitance is addressed.
Từ khóa
#Frequency response #Indium phosphide #Avalanche photodiodes #Zinc #Capacitance #SONET #Absorption #Open systems #Business communication #Cities and townsTài liệu tham khảo
10.1109/3.823466
10.1109/16.777151
10.1017/CBO9780511599828.010
10.1109/68.841277
10.1109/16.777150
itzler, 1999, Proc LEOS'99, 748