Tunable injection current compensation architecture for high fill-factor self-buffered active pixel sensor
Proceedings. IEEE Asia-Pacific Conference on ASIC, - Trang 101-104
Tóm tắt
A high fill-factor self-buffered active pixel sensor and a tunable injection current compensation architecture for high dynamic range imager is proposed for scaled CMOS technology. The new cell, including a photodiode, is formed by n-well and p-type substrate and a single-transistor output buffer can achieve fill-factor of 55%. Dynamic range of up to 120 dB is projected by simulation results. Experimental results for the new structure and simulated design of the circuit are discussed in this work.
Từ khóa
#CMOS image sensors #Diodes #Voltage #Tunable circuits and devices #Dynamic range #CMOS technology #Pixel #Circuit simulation #Costs #Equivalent circuitsTài liệu tham khảo
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