Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].

A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1239 (2004) [Semiconductors 38, 1202 (2004)].

I. Berbezier, A. Ronda, A. Portavoce, and N. Motta, Appl. Phys. Lett. 83, 4833 (2003).

A. V. Osipov, F. Schmitt, S. A. Kukushkin, and P. Hess, Appl. Surf. Sci. 188, 156 (2002).

V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Phys. Rev. B 68, 075409 (2003).

V. G. Dubrovskii, Yu. G. Musikhin, G. E. Cirlin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 342 (2004) [Semiconductors 38, 329 (2004)].

V. G. Dubrovskii, G. E. Cirlin, Yu. G. Musikhin, et al., J. Cryst. Growth 267, 47 (2004).

D. Kashchiev, Nucleation: Basic Theory with Applications (Butterworth Heinemann, Oxford, 2000).

P. Müller and R. Kern, Appl. Surf. Sci. 102, 6 (1996).

F. M. Kuni, Preprint No. 84-178.E (ITP, Kiev, 1984).