Soyoung Kim1,2, Jeongwoon Hwang3, Yun Ji Kim1,2, Hyeon Jun Hwang1, Myungwoo Son1,2, Revannath Dnyandeo Nikam1,2, Moon‐Ho Ham1,2, Kyeongjae Cho4,3, Byoung Hun Lee1,2
1Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 Korea
2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 Korea
3Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
4Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China
Tóm tắt
AbstractA method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n‐type dopant) and poly (acrylic acid) (as a p‐type dopant), are used to pre‐set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n‐type graphene) and 1.2 V (p‐type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction‐based devices, which is a crucial function required to implement graphene‐based electronic devices in integrated circuits.
