Three dimensionally confined photon systems

The active region is given by a 5 nm In/sub 0.10/Ga/sub 0.90/As quantum well in the center of the GaAs cavity. Microcavities with lateral sizes on the order a few microns were fabricated by electron beam lithography and etching of the layered structures, The use of cavities to enhance and suppress optical emission rates by modifying the photon density of states has been a central interest of research in this area for fifty years. We have studied emission rates from the InGaAs quantum wells and from InGaAs quantum dots in these cavities.