Ralf B. Bergmann1, Titus J. Rinke1, R. M. Hausner1, M. Grauvogl1, Michael Vetter1, J.H. Werner1
1Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, Stuttgart D-70569, Germany
Tóm tắt
Thin film solar cells based on monocrystalline Si films are transferred to a glass superstrate.
Chemical vapor deposition serves to epitaxially deposit Si on quasi‐monocrystalline Si films obtained from
thermal crystallization of a double layer porous Si film on a Si wafer. A separation layer that forms during
this crystallization process allows one to separate the epitaxial layer on top of the quasi‐monocrystalline film
from the starting Si wafer. We presently achieve an independently confirmed solar cell conversion efficiency
of 9:26%. Ray tracing studies in combination with electrical device simulation indicate an efficiency potential
of around 17% using simple device processing and moderate assumptions on minority carrier lifetime and
surface recombination.
