The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin Solid Films - Tập 517 - Trang 6334-6336 - 2009
Ch. Wenger1, M. Lukosius1, G. Weidner1, H.-J. Müssig1, S. Pasko2, Ch. Lohe2
1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany

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