The process modeling hierarchy: connecting atomistic calculations to nanoscale behavior
Tóm tắt
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation.
Từ khóa
#Joining processes #Bismuth #Kinetic theory #Boron #Very large scale integration #Circuit simulation #Nanoscale devices #Fabrication #Ion implantation #Monte Carlo methodsTài liệu tham khảo
downey, 1998, Appl Phys Lett, 73, 10.1063/1.122146
robertson, 2000, MRS Proc, 610
jeng, 1992, Appl Phya Lett, 61
diebel, 2002, MRS Proc, 717, 10.1557/PROC-717-C4.5
dunham, 1995, J Appl Phys, 78, 10.1063/1.360156
bunea, 1998, MRS Proc, 490
10.1007/978-3-7091-6244-6_25
paukratav, 1997, Phys Rev, 858
nelson, 1998, Appl Phys Lett, 75
larsen, 1993, J Appl Phys, 73, 10.1063/1.353324
qin, 2002, MRS Proc, 717, 10.1557/PROC-717-C3.8
10.1142/9789812839664_0016
krishnamoorthy, 1998, J Appl Phys, 84, 10.1063/1.368896
hetlkelman, 1999, J Chem Phys, 111
chakravarthi, 2001, J Appl Phys, 89
uberuaga, 2002, ICCN 2001 Proc ibid Phys Stat Sol B, 101
huang, 1994, Appl Phys Lett, 65
fastenko, 2002, MRS Proc, 717
lenosky, 2000, App Phys LeN, 77
park, 1999, MRS Proc, 568, 10.1557/PROC-568-71
liu, 2000, Appl Phys Lett, 77
fair, 1973, J Appl Physl, 44
berding, 1998, Phys Rev, b58
nobili, 1994, Phya Retl, b49
jain, 0, SIMS and resistivity data from Texas Instruments
xie, 2000, J Appl Phys, 87
lawther, 1995, Appl Phys Lett, 67, 10.1063/1.115322
fastenko, 2000, MRS Proc, 669